2014
DOI: 10.1038/srep05331
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PIN architecture for ultrasensitive organic thin film photoconductors

Abstract: Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW−1. We believe such poor performance is resulted from an intrinsic self-limited effect … Show more

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Cited by 45 publications
(19 citation statements)
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“…By taking advantage of this photoprecursor approach, we have also solution-processed p–n double-layer structures containing acene compounds that are hardly soluble17. The present work expands the scope of photoprecursor approach to fabrication of the p–i–n triple-layer architecture which is more relevant to high-performance OPVs as well as other organic electronic devices such as light-emitting diodes18 and photoconductors19.…”
mentioning
confidence: 88%
“…By taking advantage of this photoprecursor approach, we have also solution-processed p–n double-layer structures containing acene compounds that are hardly soluble17. The present work expands the scope of photoprecursor approach to fabrication of the p–i–n triple-layer architecture which is more relevant to high-performance OPVs as well as other organic electronic devices such as light-emitting diodes18 and photoconductors19.…”
mentioning
confidence: 88%
“…All the obtained films display compact and uniform morphology without observable pinholes. Note that in the SEM images, components with different conductivities are displayed in different shades of gray 47, 48. The control film made without the CsPbCl 3 QDs shows essentially all dark grains throughout the image, indicating only PVK grains without PbI 2 .…”
mentioning
confidence: 99%
“…Where I p represents current under white light and I d represents current in dark. P in represents the effective incident light power on effective region (electrode channel region) [15]. Responsivity ( R ) can be enhanced by decreasing the electrode channel length, illumination power P in , and by increasing bias voltage [30].…”
Section: Resultsmentioning
confidence: 99%