PIN diode-based 4-channel switched filter bank with low-power, TTL-compatible Driver

Abstract

The design of a 4-channel switched filter bank in the S-, C-band using PIN diode switches is described. Narrow band (3.2-3.5%) filters are designed on suspended substrate stripline. The biasing circuit allows the switches to be driven with TTL-compatible voltages and minimum biasing current. The average insertion loss measured was 3.6 dB corresponding to a Q factor of 580. Spurious responses were suppressed from DC to roughly 19 GHz.

Monolithic Integrated Design of S-Band Switched Filter Bank Based on LTCC Technology

“…The switched circuits of the four switched filter banks in [8][9][10][11] are designed using RF MEMS chips or PIN diodes, and the whole switched filter banks are designed based on silicon substrate or PCB technology. Compared with the four other switched banks, the design in this paper offers 8 channels for frequency selection, and more selections can be realized by using this filter bank.…”

Design and simulation of mems shunt capacitive switch for lower switching time

“…RF MEMS switches are considered to be a potential switching device for high speed switching applications. These types of switches have capability of replacing traditional MOSFET switch, Tunnel Switch and Pin-diode based Switch [1][2][3][4]. Many actuation mechanisms such as optical actuation, electrostatic actuation, thermal actuation and actuation by force are used for MEMS switch devices [5].…”