Pixelless thermal imaging with integrated quantum-well infrared photodetector and light-emitting diode

Dupont, Emmanuel; Byloos, M.; Gao, M.; Buchanan, M.; Song, C. Y.; Wasilewski, Z. R.; Liu, H.C.

doi:10.1109/68.980504

Cited by 47 publications

(29 citation statements)

References 11 publications

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“…SIMS, AFM and TEM analysis were performed on selected wafers. Cleaved wafers were subsequently processed into devices using standard microfabrication techniques [3]. As a qualification step before fabricating the large area devices, a test cluster of smaller devices was processed from each wafer (see Fig.…”

Section: Mbe Growth and Characterizationmentioning

confidence: 99%

“…Typically, the standard GaAs buffer layer was grown at 600 1C; however, we have also tried the effectiveness of lowtemperature GaAs (LTG) buffer layers, and high temperature (690 1C) GaAs or GaAs/AlAs superlattice. The etch-stop, which was used for some QWIP-LED large area devices [3], was grown at 690 1C to ensure high quality AlGaAs in this difficult compositional range. The QWIP sections were grown at 550, 600 or 630 1C.…”

Section: Mbe Growth and Characterizationmentioning

confidence: 99%

“…In the recent past we have been developing large area (up to 1 Â 1cm 2 ) pixelless mid-IR to near-IR upconverters [2,3].These devices, which circumvent the hybridization with Si read-out circuitry necessary for standard pixilated Quantum Well Infrared Photodetector (QWIP) focal plane arrays, explore a different approach-reading the photocurrent map optically using an inexpensive high resolution CCD element. In the absence of an IR signal such a device should emit a uniform glow across its area.…”

Section: Introductionmentioning

confidence: 99%

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On the existence of submicron diameter current shunts in morphologically perfect device layers

Wasilewski

Dupont

Weyher

et al. 2010

Journal of Crystal Growth

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On the existence of submicron diameter current shunts in morphologically perfect device layers Wasilewski, Z. R.; Dupont, E.; Weyher, J. L.; Laframboise, S.; Buchanan, M.; Liu, H. C.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. (2002) 182]. The hot-spots, with surface densities varying from 20 to 3000 cm À 2 for the wafers studied, are LED electroluminescence singularities, which can be readily observed at temperatures below $ 100 K. Their spatial FWHM is less than 1 mm and they can have peak intensities of more than three orders of magnitude higher than the uniform background emission caused by the dark current through the QWIP device. In most cases the hot-spots were observed on mirror smooth, morphological defect-free surfaces. These electroluminescence abnormalities result from highly localized electron injection channels in the QWIP portion of the device. As there is no morphological abnormality in their locations, these defects are undetectable with established wafer screening instruments such as Nomarski and Surfscan, yet may be very common in MBE-grown heterostructures. Although correlation with dislocations is observed, the great majority of dislocations do not give rise to the hot-spots, and there are many hot-spots, which are not located in the proximity of any dislocation. We therefore, propose that the hot-spots arise from a local alloy separation in ternary layers, induced by floating organic molecules or molecular contamination clusters, resulting in nanowire-like defects. Highly localized drops in the layer resistivity caused by such defects will adversely affect the performance of any devices relying on vertical transport, particularly if the device current depends very strongly on the height of the potential barriers employed, such as in quantum well infrared photodetectors or resonant tunneling diodes. Also, for devices working at high current densities, such as certain lasers or HBTs, the presence of such defects may lead to early device failure. Crown

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Section: Mbe Growth and Characterizationmentioning

confidence: 99%

Section: Mbe Growth and Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On the existence of submicron diameter current shunts in morphologically perfect device layers

Wasilewski

Dupont

Weyher

et al. 2010

Journal of Crystal Growth

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“…A novel QWIP-LED infrared focal plane device was put forward and firstly demonstrated by Liu. His project skillfully utilized the flexibility of quantum wells and the maturity of silicon CCD to realize the optical readout of the QWIP-FAP [16][17][18] .…”

mentioning

confidence: 99%

Development of an infrared detector: Quantum well infrared photodetector

Lü

Zheng

et al. 2009

Sci. China Ser. G-Phys. Mech. Astron.

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The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.infrared photoelectronics, QWIP, progress, development trendThe infrared detectors are transducers of infrared radiation with high-sensitivity. The early infrared detectors are thermometers, responding purely to the heating effect of the incoming infrared radiation. The detectors made based on the difference of electrons' transport performance when excited by photons are called photon detectors. The photon detectors represented by HgCdTe have achieved long-term development, and quantum well infrared photo-detectors (QWIPs), whose mechanism is sharply different from HgCdTe (HCT) detectors, are making a fine figure now.Responding to the heating effect distribution of objects is the certain development of the infrared radiation's detection. The element detector technology combined with the two-dimensional mechanical scanning system constituted the 1st generation scanning imaging detection technology, and the 2nd generation one is the infrared focal plane array technology, which transformed the mechanical scanning into electrical scanning, and single elements into arrays.In the development of array detector, the uniformity is of great importance for the imaging detection. Just like the position and role of silicon material in the micro-electronic field, the HCT infrared focal plane array plays a prominent role in the infrared imaging detection field at present. However, due to the Hg-Te combination bond in HCT material is relatively fragile, the HCT materials and devices preparation always can not be precisely controlled as silicon, making it quite difficult to reach high-uniformity. On the other hand, the main material of QWIP device is GaAs-based semiconductor material, which is only second to silicon process and 1st-order higher in uniformity. However, the quantum efficiency of QWIP is about 1st-order lower than that of HCT infrared detector due to the basic operation principle of QWIPs. Thus, the advantages of QWIPs in uniformity and disadvantages in quantum efficiency have determined a complementary status between them.In 1983, Smith et al. [1] firstly showed the possibility of using optical waveguide-type multiple quantum well for 3-5 μm and 8-14 μm infrared light detection. Two years later strong intersubband absorption in a GaAs/ Al x Ga 1−x As multi-quantum well under oblique incidence was observed by West et al. [2] . Later, a detectivity of 1.0×10 10 cm·Hz 1/2 /W and peak response wavelength of

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“…Quantum well infrared photodetectors (QWIPs) as thermal imagers using focal plane arrays (FPAs) have been studied extensively [1] [2] [3]. For electronic transport QWIPs operate at photoconductive and photovoltaics modes.…”

Section: Introductionmentioning

confidence: 99%