PL properties and defects of SnS layers based on n-type buffer layers/p-type SnS structures

Tosuke, Taichi; Sugiyama, Mutsumi

doi:10.7567/1347-4065/ab0e4a

Cited by 7 publications

(10 citation statements)

References 29 publications

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“…Alternatively, impurities in the p-type SnS layer from residual impurity gas in the deposition chamber may explain the low V OC . Moreover, the number of defects at the interface of SnS heterojunction thin-film solar cells can be reduced by a post-annealing process [71,72], which is very likely to also be effective to homojunction solar cells. Assuming that interface defects can be reduced by these means, solar cells with this structure are expected to exhibit a much higher V OC and conversion efficiency.…”

Section: Prototype Homojunction Solar Cells With N-type Sns Single Cr...mentioning

confidence: 99%

Current status of n-type SnS: paving the way for SnS homojunction solar cells

et al. 2022

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Orthorhombic SnS is a promising thin-film solar-cell material composed of safe and abundant elements with suitable optical properties for photovoltaic application. For approximately two decades, SnS solar cells have employed heterojunction structures with p-type SnS and other n-type semiconductors because undoped SnS typically exhibits p-type electrical conduction. However, their conversion efficiency has remained stagnant at 4–5% for a long time. A breakthrough is required to significantly improve their conversion efficiencies before SnS solar cells can be put into practical use. Therefore, this comprehensive review article establishes the current state of the art in SnS solar cells, with an aim to accelerate both fundamental research and practical applications in this field. We discuss issues specific to SnS heterojunction solar cells, the advantages of the homojunction structure, and summarize recent advances in the n-type conversion of SnS by impurity doping, which is required to form a homojunction. The latter half of this article describes the latest research on the fabrication of n-type single crystals and films of halogen-doped n-type SnS, which is prepared via a doping system suitable for practical use. We conclude the article by summarizing the current status and future work on SnS homojunction devices, including the development of high-efficiency multi-junction SnS solar cells by band gap engineering.

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Section: Prototype Homojunction Solar Cells With N-type Sns Single Cr...mentioning

confidence: 99%

Current status of n-type SnS: paving the way for SnS homojunction solar cells

et al. 2022

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“…In general, polycrystalline thin films tend to be used for compound solar cells and exhibit numerous grain boundaries that may impede various measurement parameters. For SnS thin films, several film properties including grain boundary scattering and recombination centers have been observed experimentally through photoluminescence (PL), [7][8][9][10] temperature-dependent conductivity (σ) measurement, 11) temperature-dependent Hall measurements on σ, [12][13][14][15] and carrier concentration (n). [15][16][17] However, few experimental studies have detailed the defect properties and acceptor level of SnS epitaxial thin films, which have a small number of grain boundaries and highly oriented crystals.…”

Section: Introductionmentioning

confidence: 99%

“…The growth of a layered structure semiconductor such as MoS 2 on SiO 2 /Si substrates using sputtering has already been reported in a representative layered material, transition metal dichalcogenide. 32) The thin film properties 10,15,[33][34][35] and solar cell performance 35) of polycrystalline SnS films deposited using RF sputtering have already been reported; however, SnS epitaxial film grown using sputtering has not been clarified adequately. Sulfurization is also attractive as a post-deposition treatment to improve crystal quality, similar to annealing in general semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates

Takisawa¹,

Sugiyama²

2022

Jpn. J. Appl. Phys.

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The crystallographic and electrical properties of tin monosulfide (SnS) epitaxial thin films grown by RF magnetron sputtering and sulfurization were investigated. The SnS(040)-oriented films were grown on an MgO(100) substrate. Two types of four-fold rotational symmetrical in-plane orientations, offset by 45° from each other, were observed using X-ray diffraction. The rotational symmetry was also observed using cross-sectional transmission electron microscopy. The electrical properties of the SnS films were controlled by varying the sulfurization temperature, and the carrier transport of all the SnS epitaxial films was mainly limited by grain boundary scattering. The activation energies of the carrier concentration before and after sulfurization of the films were estimated to be approximately 0.26 ± 0.02 eV and 0.20 ± 0.01 eV, respectively, based on temperature-dependent Hall measurements. These values mainly correspond to the acceptor level energy of Sn vacancy with a high/low potential barrier height around the grain boundary.

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“…Additionally, the constituent elements of SnS are earth-abundant, relatively inexpensive, and non-toxic, making it an environmentally friendly material. In our previous study, we analyzed the electrical, 7) crystal structural, 8) optical, 9) device structural, 10,11) and photovoltaic 12) properties of SnS thin films and SnS solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…[29][30][31][32][33][34] However, very few studies have been conducted on the p-n interface in an SnS film. 9) This knowledge is crucial for improving the device performance because carriers originate from the defects around the p-n interface. The acceptor/donor in an SnS film must be controlled using the extrinsic impurities owing to the density of an acceptor in the intrinsic defects of an SnS film being low.…”

Section: Introductionmentioning

confidence: 99%

Influence of Cd, S and Na atoms on photoluminescence in tin sulfide thin films

Kanai¹,

Kusatsu²,

Sugiyama³

2022

Jpn. J. Appl. Phys.

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The fundamental defects around the p–n interface were analyzed based on low temperature photoluminescence (LT-PL) measurements to determine the origin of the various defects around the n-CdS/p-SnS structure in tin sulfide (SnS) solar cells. Particularly, the effects of Cd, S, and Na atoms on PL at the interface of a CdS layer and various treated SnS layers were examined. The PL peaks at 1.08 eV and 1.23 eV in the CdS/SnS structure, which were observed using the Cd partial electrolyte-treated SnS film, were associated with the formation of Cd-related defects. Furthermore, the PL peak at 1.27 eV in the CdS/SnS structure, which was observed using the sulfurized SnS film and the excess Na diffused SnS film, was associated with the formation of S-related defects such as OS defects. These findings present considerable potential for improving the efficiency of SnS solar cells.

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PL properties and defects of SnS layers based on n-type buffer layers/p-type SnS structures

Cited by 7 publications

References 29 publications

Current status of n-type SnS: paving the way for SnS homojunction solar cells

Current status of n-type SnS: paving the way for SnS homojunction solar cells

Tin monosulfide (SnS) epitaxial films grown by RF magnetron sputtering and sulfurization on MgO(100) substrates

Influence of Cd, S and Na atoms on photoluminescence in tin sulfide thin films

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