Plain Poly(acrylic acid) Gated Organic Field-Effect Transistors on a Flexible Substrate

Abstract

We report on the use of a polyanionic proton conductor, poly(acrylic acid), to gate a poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-based organic field-effect transistor (OFET). A planar configuration of the OFET is evaluated, and the electrical performance and implementation on a flexible substrate are discussed.

Solution‐Processed Bilayer Dielectrics for Flexible Low‐Voltage Organic Field‐Effect Transistors in Pressure‐Sensing Applications

“…The molecular structures of PAA and PMMA are also shown in Figure 1b, where the formed polymer composite dielectric layer has an inherently vertical phase separation structure (as illustrated in the inset of Figure 1b). Note that PAA is an attractive ion‐conducting polyelectrolyte dielectric showing high capacitance, which results from the formation of an electrical double layer (as presented in Figure 1a) due to ion charge separation upon an applied voltage to the gate 31. Although the high unit‐area capacitance of PAA dielectric allows it to induce high carrier densities in the channel under low‐voltage operation,35 its negative impacts such as high hysteresis, low switching speed, and large leakage current should be overcome for the OFET application.…”

“…Recently, incorporation of thick polyelectrolytes as dielectrics was demonstrated to be an alternative method to fulfill high capacitance and thus low‐voltage operation of OFETs 28, 29, 30. Despite these interesting merits, polyelectrolyte materials have severe disadvantages of large leakage current, high hysteresis, and poor stability,31 which largely limit their utilizations in OFETs, particularly for the OFET‐based pressure sensors. Therefore, it is necessary to tailor polyelectrolyte dielectric layers to prevent leakage currents and improve operational stability, which are essential for low‐voltage OFETs and related sensors.…”

An ionic liquid-gated polymer thin film transistor with exceptionally low “on” resistance

“…1(a), which is known for its exceptionally high carrier mobility. 4,12 Also, due to its particularly rigid conjugated backbone, PBTTT only dissolves in hot chlorinated benzenes. 12 We here show that PBTTT's poor solubility extends to an IL, 1-ethyl-3-methylimidazolium-bis(trifluoromethyl-sulfonyl)imide ("EMITSFI") Fig.…”

“…In recent years, OTFTs using electrolytes rather than insulators as gate media have been demonstrated, including solid electrolytes, 3,4 water, 5,6 and ionic liquids (ILs). [7][8][9] Under applied gate voltage, an extremely thin electric double layer (EDL) forms at the electrolyte/semiconductor interface, with high specific capacitance (>1000 nF/cm 2 ), low V T , and consequently high I W /low R W .…”

High mobility flexible polymer thin-film transistors with an octadecyl-phosphonic acid treated electrochemically oxidized alumina gate insulator

“…Another method to realize low-voltage OTFT operation is to develop several high-k inorganic or inorganic-organic hybrid blend dielectrics. 19,20 Among high-k inorganic dielectrics, AlO x is an outstanding insulator material due to its room-temperature and environmental friendly process, high dielectric constant (8)(9)(10)(11)(12), low leakage current, and low cost. For example, Sekitani et al 21,22 and Zschieschang et al 23 have fabricated ultrathin AlO x using brief oxygen plasma as the gate dielectric.…”