Planar GaAs Nanowires on GaAs (100) Substrates: Self-Aligned, Nearly Twin-Defect Free, and Transfer-Printable

Fortuna, Seth A.; Wen, Jianguo; Chun, Ik Su; Li, Xiuling

doi:10.1021/nl802331m

Cited by 182 publications

(229 citation statements)

References 37 publications

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“…It should be noted, that growth of planar NWs along the substrate surface is a subfield within NW growth [44][45][46][47]. However, growth of NWs in general implies a continuous supply of group III as well as group V. Here we have no intentional source of group III material on during our annealing experiments.…”

Section: A Annealing Of Au Nanoparticles On Gaas 111b and 100 Smentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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Section: A Annealing Of Au Nanoparticles On Gaas 111b and 100 Smentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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“…However, recently reported alternative surface-guided growth systems, such as of GaN NWs on sapphire substrates (5) or GaAs NWs on GaAs substrates (30), show that this concept can be applied to a broad variety of NW materials and substrates. Further areas to study include (i) guided growth of NWs with coherently modulated composition and doping, allowing integration of p-type and n-type NWs, and heterojunctions (31); (ii) the transfer of the assembled NWs and circuits onto other substrates such as silicon and plastics (15) (Initial results have already been achieved by our group by selective etching of the substrate.…”

Section: Resultsmentioning

confidence: 99%

Self-integration of nanowires into circuits via guided growth

Schvartzman

Tsivion

Mahalu

et al. 2013

Proc. Natl. Acad. Sci. U.S.A.

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The ability to assemble discrete nanowires (NWs) with nanoscale precision on a substrate is the key to their integration into circuits and other functional systems. We demonstrate a bottom-up approach for massively parallel deterministic assembly of discrete NWs based on surface-guided horizontal growth from nanopatterned catalyst. The guided growth and the catalyst nanopattern define the direction and length, and the position of each NW, respectively, both with unprecedented precision and yield, without the need for postgrowth assembly. We used these highly ordered NW arrays for the parallel production of hundreds of independently addressable single-NW field-effect transistors, showing up to 85% yield of working devices. Furthermore, we applied this approach for the integration of 14 discrete NWs into an electronic circuit operating as a three-bit address decoder. These results demonstrate the feasibility of massively parallel "self-integration" of NWs into electronic circuits and functional systems based on guided growth.T he sustained progress in semiconductor technology introduces new challenges associated with the scaling and functionality of nanosize components. In the face of these challenges, alternative unconventional device and fabrication concepts based on bottom-up assembly of synthetic nanostructures are being intensively explored (1). These nanostructures, such as quantum dots (2), nanotubes (3), and nanowires (NWs) (4), can be chemically synthesized with exquisite control over their structures and properties down to the atomic level. On the other hand, their self-assembly alone is unlikely to produce the arbitrary geometries and long-range order that are required for their integration into functional systems. To realize such systems, bottomup assembly may be used as a complementary step in a sequence of top-down fabrication processes. Such a hybrid top-down/ bottom-up approach can be based on the directed self-assembly of building blocks onto a lithographically produced template to fit the design of an integrated functional system. Thus, the building blocks integrate themselves into the system, as one of the layers in the overall design. Here we demonstrate the feasibility of this "self-integration" concept with the parallel fabrication of large numbers of devices and complex circuits, based on guided growth of horizontal NWs (5).NWs are attractive building blocks for the bottom-up assembly of nanoscale devices and functional systems with potential applications in nanoelectronics (6), photonics (7), renewable energy (8), and biology (9). They can be synthesized with precisely controlled nanoscale dimensions and chemical compositions (10). Moreover, they may be structured to possess unique electronic properties, such as ballistic conductivity due to confinement of a 1D charge-carrier gas in core-shell NWs (11). The potential of NW-based electronics has been demonstrated for various NW materials (12). However, most studies were done at the single-device level. The main obstacle toward NW integration...

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“…The horizontally grown nanowires have also been utilized to integrate horizontal nanochannels with known registries to microchannels (Nikoobakht, 2009). Horizontally aligned GaAs nanowires have also been realized on GaAs (100) substrates using atmospheric pressure MOCVD with Au as catalyst (Fortuna et al, 2008). GaAs nanowires with diameter of ~30 nm and length of several microns are grown in plane in either the [1 1 0] or [ 1 10] direction axially at 460-475 °C.…”

Section: Direct Growth Of Horizontally Aligned Nanowiresmentioning

confidence: 99%