In
this report, we investigate the room-temperature gas sensing
performance of heterostructure transition metal dichalcogenide (MoSe2/MoS2, WS2/MoS2, and WSe2/MoS2) thin films grown over a silicon substrate
using a pulse laser deposition technique. The sensing response of
the aforementioned sensors to a low concentration range of NO2, NH3, H2, CO, and H2S gases
in air has been assessed at room temperature. The obtained results
reveal that the heterojunctions of metal dichalcogenide show a drastic
change in gas sensing performance compared to the monolayer thin films
at room temperature. Nevertheless, the WSe2/MoS2-based sensor was found to have an excellent selectivity toward NO2 gas with a particularly high sensitivity of 10 ppb. The sensing
behavior is explained on the basis of a change in electrical resistance
as well as carrier localization prospects. Favorably, by developing
a heterojunction of diselenide and disulfide nanomaterials, one may
find a simple way of improving the sensing capabilities of gas sensors
at room temperature.