Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy

Zutter, Brian; Schulte, Kevin L.; Kim, Tae Wan; Mawst, Luke J.; Kuech, T. F.; Foran, Brendan; Sin, Yongkun

doi:10.1007/s11664-013-2839-x

Cited by 2 publications

(1 citation statement)

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“…The use of chemical-mechanical planarization (CMP) with appropriate applied pressure on the MBL cap was found to reduce the cross-hatching height by more than 20 times. 22 A single stage of the QCL structure grown atop an MBL, which had undergone the CMP treatment, did result in electroluminescence (EL) emission near 3.6-μm wavelength from mesa devices tested at 80 K. 21 However, indium enrichment was observed in the MBL cap layer when heated to highregrowth temperatures. An additional wet-chemical etching step introduced after the CMP resolved this issue and provided an epi-appropriate surface for regrowth of strained SL layers.…”

Section: Introductionmentioning

confidence: 99%

Design considerations for λ ∼ 3.0- to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers

et al. 2017

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Design considerations for λ ∼ 3.0-to 3.5-μm-emitting quantum cascade lasers on metamorphic buffer layers," Opt. Eng.Abstract. Quantum cascade lasers (QCLs) that employ metamorphic buffer layers as substrates of variable lattice constant have been designed for emission in the 3.0-to 3.5-μm wavelength range. Theoretical analysis of the active-region (AR) energy band structure, while using an 8-band k • p model, reveals that one can achieve both effective carrier-leakage suppression as well as fast carrier extraction in QCL structures of relatively low strain. Significantly lower indium-content quantum wells (QWs) can be employed for the AR compared to QWs employed for conventional short-wavelength QCL structures grown on InP, which, in turn, is expected to eliminate carrier leakage to indirect-gap valleys (X, L). An analysis of thermo-optical characteristics for the complete device design indicates that high-Al-content AlInAs cladding layers are more effective for both optical confinement and thermal dissipation than InGaP cladding layers. An electroluminescence-spectrum full-width half-maximum linewidth of 54.6 meV is estimated from interface roughness scattering and, by considering both inelastic and elastic scattering, the threshold-current density for 3.39-μm-emitting, 3-mm-long back-facet-coated QCLs is projected to be 1.40 kA∕cm 2 .

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Section: Introductionmentioning

confidence: 99%