Plasma‐Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma

Erkens, I.J.M.; Verheijen, Marcel A.; Knoops, Hcm Harm; Landaluce, Tatiana Fernandez; Roozeboom, F.; Kessels, W.M.M.

doi:10.1002/cvde.201407109

Cited by 11 publications

(7 citation statements)

References 40 publications

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“…The efficient incorporation of oxygen during the reactive sputterdeposition in an Ar and O atmosphere and the related increase in the Schottky barrier due to higher work function of PtO x together with the beneficial effect of the PLOX treatment indicate that other PtO x deposition processes, in which reactive oxygen species are involved, could facilitate similar device performance. Possibly oxygen-plasma-assisted atomic layer deposition (ALD) 92 or ozone-assisted ALD 93 have the potential to enable interface oxidation and PtO x growth in a single processing step.…”

Section: T H Imentioning

confidence: 99%

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃

Michel

Splith

Rombach

et al. 2019

ACS Appl. Mater. Interfaces

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Preparation of rectifying Schottky contacts on n-type oxide semiconductors, such as indium oxide (In 2 O 3 ), is often challenged by the presence of a distinct surface electron accumulation layer. We investigated the material properties and electrical transport characteristics of platinum contact/indium oxide heterojunctions to define routines for the preparation of high-performance Schottky diodes on n-type oxide semiconductors. Combining the evaluation of different Pt deposition methods, such as electron-beam evaporation and (reactive) sputtering in an (O and) Ar atmosphere, with oxygen plasma interface treatments, we identify key parameters to obtain Schottky-type contacts with high electronic barrier height and high rectification ratio. Different photoelectron spectroscopy approaches are compared to characterize the chemical properties of the contact layers and the interface region toward In 2 O 3 , to analyze charge transfer and plasma oxidation processes as well as to evaluate the precision and limits of different methodologies to determine heterointerface energy barriers. An oxygen-plasma-induced passivation of the semiconductor surface, which induces electron depletion and generates an intrinsic interface energy barrier, is found to be not sufficient to generate rectifying platinum contacts. The dissolution of the functional interface oxide layer within the Pt film results in an energy barrier of ∼0.5 eV, which is too low for an In 2 O 3 electron concentration of ∼10 18 cm −3 . A reactive sputter process in an Ar and O atmosphere is required to fabricate rectifying contacts that are composed of platinum oxide (PtO x ). Combining oxygen plasma interface oxidation of the semiconductor surface with reactive sputtering of PtO x layers results in the generation of a high Schottky barrier of ∼0.9 eV and a rectification ratio of up to 10 6 . An additional oxygen plasma treatment after contact deposition further reduced the reverse leakage current, likely by eliminating a surface conduction path between the coplanar Ohmic and Schottky contacts. We conclude that processes that allow us to increase the oxygen content in the interface and contact region are essential for fabrication of device-quality-rectifying contacts on various oxide semiconductors.

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Section: T H Imentioning

confidence: 99%

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃

Michel

Splith

Rombach

et al. 2019

ACS Appl. Mater. Interfaces

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“…has been achieved primarily using MeCpPtMe 3 and O 2 in thermal 11 or plasma-enhanced 12 ALD processes, whereas ozone (O 3 ) can also be used as a co-reactant. 13 Alternatively platinum oxide (PtO x ) can be deposited by employing MeCpPtMe 3 along with O 2 plasma 14,15 or using Pt(acac) 2 and O 3 . 16 In contrast, ALD of Pt (and other metals/oxides) on graphene remains a genuine challenge due to the chemical inertness and hydrophobic nature of graphene.…”

Section: Introductionmentioning

confidence: 99%

Continuous and ultrathin platinum films on graphene using atomic layer deposition: a combined computational and experimental study

et al. 2016

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Integrating metals and metal oxides with graphene is key in utilizing its extraordinary material properties that are ideal for nanoelectronic and catalyst applications. Atomic layer deposition (ALD) has become a key technique for depositing ultrathin, conformal metal(oxide) films. ALD of metal(oxide) films on graphene, however, remains a genuine challenge due to the chemical inertness of graphene. In this study we address this issue by combining first-principles density functional theory (DFT) simulations with ALD experiments. The focus is on the Pt ALD on graphene, as this hybrid system is very promising for solar and fuel cells, hydrogen technologies, microreactors, and sensors. Here we elucidate the surface reactions underpinning the nucleation stage of Pt ALD on pristine, defective and functionalized graphenes. The employed reaction mechanism clearly depends on (a) the available surface groups on graphene, and (b) the ligands accompanying the metal centre in the precursor. DFT calculations also indicate that graphene oxide (GO) can afford a stronger adsorption of MeCpPtMe, unlike Pt(acac), as compared to bare (non-functionalized) graphene, suggesting that GO monolayers are effective Pt ALD seed layers. Confirming the latter, we evince that wafer-scale, continuous Pt films can indeed be grown on GO monolayers using a thermal ALD process with MeCpPtMe and O gas. Besides, the current in-depth atomistic insights are of practical use for understanding similar ALD processes of other metals and metal oxides on graphene.

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“…The oxygen content can be controlled through the deposited temperature and O 2 plasma exposure time ( Figure 4A). [81] To avoid the oxidation of Pt to PtO x due to strong oxidizing agent such as ozone or oxygen plasma, it is necessary to add a step to the ALD cycle in which the surface is exposed to a reducing gas, converting the top PtO x layer into Pt. At room temperature, Mackus and coworkers [82] prepared pure Pt by three-step plasma ALD processes including MeCpPtMe 3 , O 2 and H 2 gas pulses.…”

Section: The Effect Of Ald Processesmentioning

confidence: 99%

Electrocatalysts by atomic layer deposition for fuel cell applications

Cheng

Shao

et al. 2016

Nano Energy

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Fuel cells are a promising technology solution for reliable and clean energy because they offer high energy conversion efficiency and low emission of pollutants. However, high cost and insufficient durability are considerable challenges for widespread adoption of proton exchange membrane fuel cells (PEMFCs) in practical applications. Current PEMFCs catalysts have been identified as major contributors to both the high cost and limited durability. Atomic layer deposition (ALD) is emerging as a powerful technique for solving these problems due to its exclusive advantages over other methods. In this review, we summarize recent developments of ALD in PEMFCs with a focus on design of materials for improved catalyst activity and durability. New research directions and future trends have also been discussed.

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Plasma‐Assisted Atomic Layer Deposition of PtO_x from (MeCp)PtMe₃ and O₂ Plasma

Cited by 11 publications

References 40 publications

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃

Continuous and ultrathin platinum films on graphene using atomic layer deposition: a combined computational and experimental study

Electrocatalysts by atomic layer deposition for fuel cell applications

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Plasma‐Assisted Atomic Layer Deposition of PtOx from (MeCp)PtMe3 and O2 Plasma

Cited by 11 publications

References 40 publications

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In2O3

Continuous and ultrathin platinum films on graphene using atomic layer deposition: a combined computational and experimental study

Electrocatalysts by atomic layer deposition for fuel cell applications

Contact Info

Product

Resources

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Plasma‐Assisted Atomic Layer Deposition of PtO_x from (MeCp)PtMe₃ and O₂ Plasma

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃

Processing Strategies for High-Performance Schottky Contacts on n-Type Oxide Semiconductors: Insights from In₂O₃