Plasma-assisted chemical vapor deposition processes and their semiconductor applications

Sherman, Arthur

doi:10.1016/0040-6090(84)90022-1

Cited by 40 publications

(9 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6. It is seen that films made with Ar have a compressive stress and show no clear correlation with the deposition temperature T. The measured value of the compressive stress (2-5 x l0 s N/m 2) is acceptable (7,8) from the point of view of mechanical stability. On the other hand, films made with He show a clear dependence on T, going from compressive to slightly tensile at 300~…”

Section: Experimental Techniques and Resultsmentioning

confidence: 84%

A Comparison Between Silicon Nitride Films Made by PCVD of N 2 ‐ SiH4 / Ar and N 2 ‐ SiH4 / He

Allaert

Calster

Loos

et al. 1985

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper reports on the passivating properties of PCVD silicon nitride obtained from the gas mixtures N.2 + Sill4 diluted in Ar (Sill JAr) and N2 + Sill4 diluted in He (SiHJHe). Ellipsometric data, Auger data, IR data, mechanical stress, pinholes, and electrical data are presented. The stability of the hydrogen bonds in the silicon nitride is evaluated by low temperature annealing. By comparison of the properties of nitrides made from N2 + SiH4/He and N2 + Sill JAr, it is concluded that the former one yields more uniform films, less critical to deposition temperature, while the latter process behaves better for passivating purposes. On the other hand, it is shown that the carrier gas (He or Ar) has a marked influence on the properties of the films, especially on the hydrogen content. It is found that both PCVD nitrides are best described as SixN,H~Ot.Undoubtedly, the major advantage of PCVD techniques is the low temperature processing involved. Thus, the most important application of PCVD silicon nitride is the passivation of integrated circuits. In this application, the deposition temperature is at most 350~ Therefore, we examined silicon nitride films deposited at 150 ~ 200 ~ and 300~ A capacitively coupled parallel plate PCVD reactor, manufactured by L.F.E., Incorporated (Model PND-301), has been used for the depositions. A schematic diagram of this apparatus has been given elsewhere (1).Among the different possible gas mixtures, we used diluted silane (as a safety precaution) and nitrogen. Nitrogen was preferred to ammonia, because it leads to silicon nitride films with a lower hydrogen content. Sill4 was diluted up to 1.75% in commonly used Ar (SiHJAr) or in He (SiHJHe). He was used because it was mentioned in the literature (2) that films deposited with SiHJHe show more uniform properties.A review of the literature on PCVD silicon nitrides shows that a major part of the work has been done on nitride films deposited by mixtures of Sill4 and NH3. It is also found that the properties of the nitride films not only depend on the gases, but also on the actual reactor configuration used. This explains why some of the results reported here are not fully comparable to previous work on a L.F.E. reactor reported by Dun et al. (3). Dun premixes the gases SiH~ and N~, while our equipment configuration consists of a separated gas inlet system. We found, for both SiH4/Ar and SiHJHe gas mixtures, the resulting nitride films to be Si rich and become even more Si rich as deposition temperature increases. This is in agreement with results obtained by Maeda et al.(1) in the same L.F.E. reactor. However, Maeda did not examine the influence of different carrier gases. This Si dependency on deposition temperature will be explained by the fact that PCVD silicon nitrides have no fixed st0ichiome-try, so that they are best described as Si~N,HzO~. From this formula, a consistent definition for the Si/N ratio will be derived.As our goal was the investigation of the dependence of the passivation properties of silicon nitride on the d...

show abstract

Section: Experimental Techniques and Resultsmentioning

confidence: 84%

A Comparison Between Silicon Nitride Films Made by PCVD of N 2 ‐ SiH4 / Ar and N 2 ‐ SiH4 / He

Allaert

Calster

Loos

et al. 1985

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The stress in plasma silicon dioxide is tensile 3 or compressive. [28][29][30] depending on the process conditions. The compressive stress usually ranges from 100 to 300 MPa.…”

Section: Resultsmentioning

confidence: 99%

Thick SiO[sub 2] Films Obtained by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane, Carbon Dioxide, and Hydrogen

Kuo

Yang

2000

J. Electrochem. Soc.

View full text Add to dashboard Cite

Amorphous silicon dioxide thick films were prepared on glass and silicon substrates by plasma-enhanced chemical vapor deposition using hexamethyldisilazane H 2 , and CO 2 , where the H 2 acted as a reactant and carrier gas. These films were studied by choosing different substrate temperatures, radio frequency (rf) discharge power, and flow rates of H 2 and CO 2 . A variation in the heat of adsorption with rf power was identified. The films were characterized by electron spectroscopy for chemical analysis and scanning electron microscopy. The growth rate increased with rf power, but decreased with increasing substrate temperature. An adsorptioncontrolled reaction was identified in this system with a varying heat of adsorption depending on the rf power. Hardness changed with experimental parameters and varied in the range of 10-16 GPa. Scratch tests showed a brittle fracture of the thick films. The internal stress of the thick films was determined for different deposition parameters. Refractive indices of the thick films also were measured and varied in the range of 1.33-1.61.

show abstract

“…In the PECVD process, a partially ionized high-energy gas (plasma), is generated by direct current (DC) or microwave sources and coupled to the reactor to activate the precursor gas, thereby significantly decreasing the deposition temperature as compared to thermal CVD techniques [27]. The very high electron temperature created by the plasma creates many dissociated species that are accelerated towards the substrate, where they recombine to form thin films [29].…”

Section: Vapour-phasementioning

confidence: 99%

“…The PECVD reactor consists of a chamber with the top electrode connected to a low frequency RF signal to power the discharge and the bottom electrode connected to a rotating shaft and heated by radiation from an electrical heater [29]. The electrodes are spaced about 2 inches apart, to ensure the glow discharge is uniform throughout the entire space between them which in turn makes for uniform film depositions.…”

Section: Vapour-phasementioning

confidence: 99%

Nanoscale self-assembly: concepts, applications and challenges

2022

View full text Add to dashboard Cite

Self-assembly offers unique possibilities for fabricating nanostructures, with different morphologies and properties, typically from vapor or liquid phase precursors. Molecular units, nanoparticles, biological molecules and other discrete elements can spontaneously organise or form via interactions at the nanoscale. Currently, nanoscale self-assembly finds applications in a wide variety of areas including carbon nanomaterials and semiconductor nanowires, semiconductor heterojunctions and superlattices, the deposition of quantum dots, drug delivery, such as mRNA-based vaccines, and modern integrated circuits and nanoelectronics, to name a few. Recent advancements in drug delivery, silicon nanoelectronics, lasers and nanotechnology in general, owing to nanoscale self-assembly, coupled with its versatility, simplicity and scalability, have highlighted its importance and potential for fabricating more complex nanostructures with advanced functionalities in the future. This review aims to provide readers with concise information about the basic concepts of nanoscale self-assembly, its applications to date, and future outlook. First, an overview of various self-assembly techniques such as vapour deposition, colloidal growth, molecular self-assembly and directed self-assembly/hybrid approaches are discussed. Applications in diverse fields involving specific examples of nanoscale self-assembly then highlight the state of the art and finally, the future outlook for nanoscale self-assembly and potential for more complex nanomaterial assemblies in the future as technological functionality increases.

show abstract

Plasma-assisted chemical vapor deposition processes and their semiconductor applications

Cited by 40 publications

References 15 publications

A Comparison Between Silicon Nitride Films Made by PCVD of N 2 ‐ SiH4 / Ar and N 2 ‐ SiH4 / He

A Comparison Between Silicon Nitride Films Made by PCVD of N 2 ‐ SiH4 / Ar and N 2 ‐ SiH4 / He

Thick SiO[sub 2] Films Obtained by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane, Carbon Dioxide, and Hydrogen

Nanoscale self-assembly: concepts, applications and challenges

Contact Info

Product

Resources

About