Plasma‐assisted electroepitaxy of GaN layers

Abstract

We have studied the growth of GaN layers by plasma‐assisted electroepitaxy (PAEE). We have used an RF‐plasma source to produce high concentrations of N species in the Ga melt and a high DC electric current to transfer the N species from the Ga surface to the growth interface. We have achieved continuous GaN layers by PAEE at growth temperatures as low as ∼650oC. We have also investigated PAEE growth of GaN layers on GaN nanocolumn templates. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Liquid-Phase Epitaxy

“…Also, the material quality of compound semiconductors can be improved by closer control of vapor pressures during LPE. As an alternative to a chemical vapor deposition reaction, Novikov and Foxon [192] used an RF-plasma nitrogen source to saturate Ga melts for GaN LPEE. The slideboat had a tungsten heater to impose a temperature gradient across the melt.…”