Plasma assisted growth of nanotubes and nanowires

Au-Catalyzed Silicon Nanoneedles Synthesized from Pure Silane Gas at Various RF Powers on Silicon Substrate by VHF-PECVD

“…Despite the fact that increase in RF power can improve the dissociation of SiH 4 gas into reactive species, the high power RF can also deactivate the catalytic effect. In this work, the results show that the Si nanoneedles grown from SiH 4 vapor are similar to those produced by other researchers [19,20]. When SiH 4 gas is introduced to the system, the RF plasma excitation produce gas phases of SiH 3, SiH 2 , SiH, and Si due to electron impact processes [21].…”

Influence of growth time on morphology and structural properties of silicon nanowires grown by VHF-PECVD

“…The crystalline structure of SiNW can be seen clearly where the spacing of the lattice plane is about 0.314 nm, and this is well matched with the (111) plane of the cubic diamond silicon structure. The SiNWs grow along /111S direction and this was essentially similar to those synthesized by other researchers [24,27]. It can also be observed that the outer layer of nanowire is from amorphous SiO 2 shell (shown with dotted line) and the thickness is about 2-5 nm.…”

“…Furthermore, Au-Si alloy also has a simple eutectic phase diagram with a low eutectic temperature. Most of the previous attempts [13,24,25] on SiNWs growth were carried out at conventional medium frequency of 13.56 MHz PECVD. However, nanowires grown using conventional PECVD, usually do not have isometricity, high density and uniform distribution.…”

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

“…One of the most widely used methods to fabricate SiNWs is the vapor-liquid-solid (VLS) method via chemical vapor deposition (CVD) where a metal catalyst locally assists the deposition of the growth precursors and thereby drives the nucleation and growth of the NWs [9,10]. In a CVD process, the selection of substrate influences SiNW growth, since they grow with a preferred orientation if the substrate is epitaxially clean.…”