Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate

Yusoff, Mohd Zaki Mohd; Mahyuddin, A.; Hassan, Z.; Yusof, Y.; Ahmad, M.A.; Chin, C.W.; Hassan, H. Abu; Abdullah, M.J.

doi:10.1016/j.spmi.2013.05.034

Cited by 15 publications

(5 citation statements)

References 20 publications

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“…As for N element, generally the distribution is also uniform however the signal is weaker than that for Ga (Figure 3c and 3 f). This discrepancy is principally caused by the low resolution of the semiconductor detector for light elements [45] …”

Section: Resultsmentioning

confidence: 99%

“…This discrepancy is principally caused by the low resolution of the semiconductor detector for light elements. [45] Detailed structural and morphological properties of the catalyst samples are studied using transmission electron microscopy technique. Figure 4 shows TEM micrographs of a representative catalyst sample (500-3c-GaN/MCM-41) at different magnifications.…”

Section: Chemcatchemmentioning

confidence: 99%

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Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Zhang

Hui

et al. 2022

ChemCatChem

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As a typical wide band gap semiconductor material, gallium nitride (GaN) has found extensive applications in electronic related fields. This material could also make a promising catalyst. However, due to the difficulty of synthesizing high surface area GaN, its applications in catalysis have been greatly constrained. In this work, we report a novel method of synthesizing high surface area GaN catalysts supported on mesoporous silica (MCM‐41) using thermal atomic layer deposition (ALD). Trimethyl gallium and ammonia were alternately dosed in the temperature range between 400–500 °C to generate nanoparticles of GaN on the support. Formation of highly dispersed GaN nanoparticles was confirmed and their structural and physiochemical properties were investigated. Structural characterization results reveal that amorphous GaN could be deposited on MCM‐41 at 400 °C while crystalline GaN could only be formed at temperatures≥500 °C and with multiple cycles of ALD. In propane dehydrogenation (PDH) reaction the ALD GaN/MCM‐41 catalysts demonstrated excellent activity and selectivity. The specific activity of amorphous GaN turned out to be better than crystalline GaN, probably due to the larger fraction of active species exposed on the surface. Density function theory calculation was used to analyze the catalytic process and mechanism of PDH on supported GaN. It was revealed that GaN was active in the cleavage of C−H bond in propane. Amorphous GaN facilitates the adsorption of propane, which could also contribute to the enhanced activity of amorphous GaN.

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Section: Resultsmentioning

confidence: 99%

Section: Chemcatchemmentioning

confidence: 99%

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Zhang

Hui

et al. 2022

ChemCatChem

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“…In order to understand the crystal structure of Al-AlN film in detail, A1.5 was further investigated by HRTEM as shown in figure 3(a). It can be observed that A1.5 has a highly ordered lattice array with tightly grain arrangement and no obvious voids, revealing the low lattice defect density and high quality AlN films were obtained by optimizing the AlN target [43]. The interplanar spacing is 0.156 nm, referring to the (110) crystal-planes of AlN films.…”

Section: Xrd Patterns Ofmentioning

confidence: 96%

Defect regulation of AlN films based on Al-rich AlN targets

Wen¹,

Shen²,

Sun³

et al. 2022

Semicond. Sci. Technol.

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Aluminum nitride (AlN) films with low defect concentration were fabricated on Si substrates via RF magnetron sputtering system based on Al-rich AlN (Al-AlN) targets. The effects of Al-rich content on structure, defects and photoelectric properties of AlN films were investigated by x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), ultraviolet-visible (UV-vis) spectra, current-voltage (I-V) and capacitance-voltage (C-V) characteristics. In particular, the defects of AlN films were investigated by XPS and low-temperature PL analyses, indicating that Al-rich AlN targets can help to reduce the defects of Al vacancy and O impurity of AlN films with an optimal Al-rich content of 1.5 wt. % (A1.5). Schottky contact behavior between AlN films and Ti/Al/Ni/Au multi-layer electrodes were revealed from I-V curves of all samples based on parallel electrodes, and AlN MSM devices prepared by A1.5 films exhibited the lowest leakage current of 2.43×10-8 A at the bias of 5 V. C-V tests indicate the less defect density and lower carrier concentrations of vertical structure of A1.5 devices. This work offers a feasible approach to regulate the defects of AlN films for practical application.

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“…Among the III-nitrides based heterostructures, the AlN/GaN junction offers the highest polarization discontinuity and largest bandgap offset for GaN. As a result, 2DEG carrier density developed in the AlN/GaN heterojunction (~2-5×10 13 cm -2 ) is much higher than that in the conventional AlGaN/GaN heterojunctions (~1×10 13 cm -2 ) [27,28,37,46,47,84,[95][96][97][121][122][123][124][125][126][127][128][129][130][131][132][133][134]. This makes AlN/GaN HEMTs very promising for high power and high-temperature applications.…”

Section: Growth Of Aln/gan/aln Dh-hemtsmentioning

confidence: 99%

“…AlN/GaN HEMTs on various foreign substrates using the AlN nucleation layer have been reported [123,128,[132][133][134][135]. These HEMTs have thick and relaxed GaN channel layer, typically 300 nm to 1 µm, leading to a spillover of electrons to the buffer at high drain bias conditions.…”

Section: Growth Of Aln/gan/aln Dh-hemtsmentioning

confidence: 99%

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

Patwal¹

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Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (111) substrate

Cited by 15 publications

References 20 publications

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Mesoporous Silica Supported Highly Dispersed GaN Catalysts Synthesized by Thermal Atomic Layer Deposition for Propane Dehydrogenation

Defect regulation of AlN films based on Al-rich AlN targets

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

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