Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In0.17Al0.83N/GaN heterostructure on Si(111)

Abstract

Articles you may be interested inImpact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon AIP Advances 5, 057149 (2015); 10.1063/1.4921757 Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al 0.2 Ga 0.8 N / GaN interface and the rapid thermal annealing effect Small valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Growth and characterization of Al Ga N ∕ Ga N heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy

Post-deposition annealing of magnetron sputtered InAlN film at different temperatures

“…Various techniques such as metal organic vapor phase epitaxy (MOVPE) [10][11][12], molecular beam epitaxy (MBE) [13][14], magnetron sputtering [15][16][17][18][19], pulsed laser deposition [20] and reactive evaporation [21] have been used to grow InAlN thin films. Growth of these films using MOVPE and MBE suffers from the difficulties associated with a large difference in the growth temperatures and thermal stabilities of InN and AlN that often result in the phase separation [22].…”

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

“…As a result of the significantly different covalent radii of the Ga and the N atoms, GaN is prone to native defect formation . It is well-known that GaN/Si grown using MOCVD contains a significant concentration of point defects, which can affect the lattice parameters through local expansion or contraction (depending on the density and types of point defects), thereby causing hydrostatic strain in the crystal. , The hydrostatic strain can be quantified using , where b is an expansion (contraction) factor for an individual defect, and C is their concentration . For heterostructure epitaxial growth (e.g., AlGaN/GaN on Si or diamond on GaN), biaxial strain is induced in the Al­(Ga)N layers because of lattice mismatch between the layers and different thermal expansion coefficients (CTE). ,, Therefore, to better understand the true nature of the strain and the material quality before and after diamond growth, these strain components are considered.…”

“…38 It is wellknown that GaN/Si grown using MOCVD contains a significant concentration of point defects, which can affect the lattice parameters through local expansion or contraction (depending on the density and types of point defects), thereby causing hydrostatic strain in the crystal. 40,41 The hydrostatic strain can be quantified using…”