2008
DOI: 10.1016/j.jcrysgro.2008.06.062
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Plasma-assisted molecular beam epitaxy of SnO2 on TiO2

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Cited by 47 publications
(26 citation statements)
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“…Effect of substrate temperature Fig. 1 presents an illustration of the substrate temperature effect on the morphology of the films deposited at the NO 2 pressure of 4 Â 10 À 3 Pa, which is sufficient pressure for full oxidation of Sn to 4+ [13]; the Sn 4 + chemical state was confirmed as described in Section 3.2. All films presented there are about 3 nm thick.…”
Section: Resultsmentioning
confidence: 88%
See 1 more Smart Citation
“…Effect of substrate temperature Fig. 1 presents an illustration of the substrate temperature effect on the morphology of the films deposited at the NO 2 pressure of 4 Â 10 À 3 Pa, which is sufficient pressure for full oxidation of Sn to 4+ [13]; the Sn 4 + chemical state was confirmed as described in Section 3.2. All films presented there are about 3 nm thick.…”
Section: Resultsmentioning
confidence: 88%
“…They discussed the behaviors of surface oxygen species using information obtained from a monocrystalline SnO 2 film produced using molecular beam epitaxy (MBE) [11]. Recently, Speck's group investigated SnO 2 film growth conditions on Al 2 O 3 (1 À 1 0 2) and TiO 2 (1 1 0) for preparation of high-quality SnO 2 films [12,13]. They carefully examined the effect of flux ratio of oxygen to tin on the film growth rate for oxygen (vacuum) pressures of approximately 0.8 Â 10 À 3 to 4 Â 10 À 3 Pa.…”
Section: Introductionmentioning
confidence: 99%
“…Several fabrication methods have been employed to grow the epitaxial (single crystal-like) SnO 2 thin films, which include sputtering [11][12][13][14][15][16], chemical vapor deposition (CVD) [17][18][19][20][21][22][23][24], physical vapor deposition (PVD) [25], pulsed laser deposition (PLD) [26][27][28][29][30], an excimer laser-assisted metal organic deposition (ELAMOD) [31], molecular beam epitaxy [32,33], and atomic layer deposition (ALD) [9,[34][35][36][37][38]. The commonly used substrates are sapphire (Al 2 O 3 ) [(0 0 0 1) (c-cut) and (1 1 0 2) (r-cut)] and TiO 2 [(0 0 1), (1 1 0), (1 0 0), and (1 1 1)], and in-and out-of-plane epitaxial relationships between SnO 2 films and substrates have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Many different methods have been employed to prepare SnO 2 films such as sputtering [6], spray pyrolysis [7], chemical vapor deposition (CVD) [8] and pulsed laser deposition (PLD) [9]. However, most of the reported SnO 2 films grown on different substrates are conventional rutile structures, including single crystalline SnO 2 films deposited on a-Al 2 O 3 [10], InP [11] and TiO 2 [12]. To the best of our knowledge, few or no epitaxial SnO 2 films with orthorhombic structure deposited on YSZ substrates have been reported.…”
Section: Introductionmentioning
confidence: 99%