Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates

Abstract

Articles you may be interested inDirect correlation between the internal quantum efficiency and photoluminescence lifetime in undoped ZnO epilayers grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al 2 O 3

Lateral Epitaxial Overgrowth of ZnO in Water at 90 °C

“…[4] Recently, two of the current authors demonstrated that epitaxial ZnO films could be grown by a low-temperature (≤ 150°C) hydrothermal method. [5] Growth of ZnO films has been widely reported using vapor-phase methods, including molecular beam epitaxy (MBE), [6][7][8] metal organic chemical vapor deposition (MOCVD), [9] and pulsed laser deposition (PLD). [10,11] Applications using epitaxial films generally require a low dislocation density.…”

Heteroepitaxial growth and surface electronic structures of ordered zinc oxide films on Mo(110) substrates

“…In order to reduce the lattice strain and dislocation density, a close lattice match between epitaxial ZnO films and substrates is favorable. Sapphire is commonly chosen as the substrates due to its low cost [2,3,7]. However, owing to a large lattice mismatch (18.4% with the 30 • inplane rotation) between ZnO (a = 3.250 Å, c = 5.213 Å) and sapphire (a = 4.754 Å, c = 12.99 Å), as-prepared ZnO films are characteristic of large mosaicity and defect-induced residual carrier concentrations [8].…”

“…ZnO, as an oxide semiconductor with a band gap of 3.37 eV at room temperature (RT), is the most promising for the development of efficient ultraviolet devices [3]. In addition, the large exciton binding energy (60 meV at RT) of ZnO, compared with these of GaN (28 meV) and ZnSe (19 meV), is of advantage to stabilize excitonic emission processes and to solve the crucial issues such as large threshold current and short lifetime, which are the most important parameters for optoelectronic devices [4].…”

Heteroepitaxial growth of non‐polar ZnO films on single crystal NdGaO3 (001) substrates by MOCVD

“…Ultraviolet (UV) light-emitting diodes (LEDs) [1][2][3], fieldeffect transistors (FETs) [4,5], and UV sensors [6,7] were fabricated by using polar faces of ZnO and ZnO-related films. ZnO and ZnO-related films with the polar faces were grown on several substrates including sapphire (0001) [8], sapphire (1120) [9], SiC [10], CaF 2 [11], MgAl 2 O 4 [12], ScAlMgO 4 (0001) [13], and ZnO (0001) [14].…”