Plasma-assisted oxidation, anodization, and nitridation of silicon

Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO 2 /Si interfaces with low defect densities

“…Alternatively, plasma-assisted oxidation (PO) of Si has been performed in microwave, RF, and DC plasmas at low processing temperatures (<400 °C) [19][20][21]. It has been demonstrated to produce excellent interface properties and low defect densities.…”

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

“…Research on understanding and enhancing the properties of ultra-thin RTO oxide-nanolayers was mainly driven by the MOS transistor and microelectronics technology. Low-temperature substitutes to the RTO process, such as plasma oxidation [20][21][22][23][24], or wet chemical oxidation [25,26] were also investigated. Varying results regarding the growth kinetics and the properties of plasma oxide-nanolayers were observed, showing a strong dependence on the type of PECVD reactor used [24].…”

Single‐phase TiO2formation by plasma oxidation of titanium thin films

“…Oxidation performed in the presence of an electric field and low temperatures not only enhances the directionality of oxidation but also reduces interdiffusion of thin films and defect generation compared with high-temperature thermally driven processes. [7] In plasma oxidation process, the substrate is subjected to plasma discharge, and positive potential is applied to the substrate to increase the oxidation rate. Silicon dioxide and aluminum oxide layers have been formed by plasma oxidation of silicon and aluminum films.…”

“…Silicon dioxide and aluminum oxide layers have been formed by plasma oxidation of silicon and aluminum films. [7,8] The difference between plasma process and thermal oxidation process is that the material on the substrate and growing oxide film is subjected to various parameters associated with plasma oxidation such as reactive ions, electrons, atomic oxygen species, and UV/X-ray radiation depending upon the plasma source during oxidation. The plasma species reach the substrate by diffusion, resulting in the formation of oxide layer.…”