2018
DOI: 10.1002/adom.201870054
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Plasma Carriers on Graphene: Relaxation of Plasma Carriers in Graphene: An Approach by Frequency‐Dependent Optical Conductivity Measurement (Advanced Optical Materials 14/2018)

Abstract: Charge carriers injected onto a graphene layer are perturbed by the probing microwave as rippling waves. By tracing these waves the mass and mobility of electrons can be determined experimentally in the technique referred as Field‐Induced Time‐Resolved Microwave Conductivity (FI‐TEMC) measurement, as shown by Shu Seki and co‐workers in article number https://doi.org/10.1002/adom.201701402.

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Cited by 3 publications
(4 citation statements)
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“…In detail, a bias potential is applied between the ITO and a gold contact to electrically dope the graphene, which allowed us to controllably tune the electric potential over a sufficiently large range. Based on the plasma carrier model, the relaxation time of graphene can be determined from the voltage dependence of the complex permittivity ratio . Experimentally, with the field-induced time-resolved microwave conductivity technique, the real change in permittivity is estimated simultaneously with the dielectric loss, providing a detailed range of charge transport characteristics in the materials.…”
Section: Model and Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…In detail, a bias potential is applied between the ITO and a gold contact to electrically dope the graphene, which allowed us to controllably tune the electric potential over a sufficiently large range. Based on the plasma carrier model, the relaxation time of graphene can be determined from the voltage dependence of the complex permittivity ratio . Experimentally, with the field-induced time-resolved microwave conductivity technique, the real change in permittivity is estimated simultaneously with the dielectric loss, providing a detailed range of charge transport characteristics in the materials.…”
Section: Model and Methodsmentioning
confidence: 99%
“…Based on the plasma carrier model, the relaxation time of graphene can be determined from the voltage dependence of the complex permittivity ratio. 36 Experimentally, with the field-induced time-resolved microwave conductivity technique, 37 the real change in permittivity is estimated simultaneously with the dielectric loss, providing a detailed range of charge transport characteristics in the materials. If the patterned graphene structure is tuned through hole doping, which can be initiated by exposing the sample to the nitric acid vapor for several minutes, 38 the permittivity of graphene can be calculated through the equation ε = 1 + iσ(ω)/ε 0 tω where ε 0 is the permittivity of vacuum and t is the thickness of the monolayer graphene layer.…”
Section: Model and Methodsmentioning
confidence: 99%
“…[47] When τ changes, σ in Equation ( 5) changes so that the impedance of the absorber also changes, resulting in a change in the absorbance of graphene. [48] Figure 5 shows the absorption characteristics of the graphenebased array structure at different relaxation times, τ. It is noticed that as τ increases from 0.8 ps to 3 ps, the frequencies of Mode I and Mode II do not change, the absorption bandwidths tend to decrease, and both absorption peaks respectively reach 0.995 and 0.999 at τ ¼ 1ps, but decrease when τ>1ps.…”
Section: Influence Of the Relaxation Time Of Graphene On The Absorbermentioning
confidence: 99%
“…[ 47 ] When τ changes, σ in Equation () changes so that the impedance of the absorber also changes, resulting in a change in the absorbance of graphene. [ 48 ]…”
Section: Dynamic Tuning Of the Absorbermentioning
confidence: 99%