Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitride

Flauta, Randolph; Kasuya, T.; Ohachi, T.; Wada, M.

doi:10.1016/s0022-0248(01)02273-4

Cited by 4 publications

(5 citation statements)

References 13 publications

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“…This decrease in the sputtered Ga was evident in the experiments of Flauta et al 5,6 The corresponding simulation result is shown in Fig. 4.…”

Section: Effect Of Sputteringsupporting

confidence: 52%

“…Details of the experimental setup and procedure were described elsewhere. 5,6 Images of the target surface microstructure were obtained with a scanning electron microscope at different locations of the target in the chamber after ion source operation. Surface characterization studies revealed two distinct morphologies.…”

Section: Experimental Observationsmentioning

confidence: 99%

“…The simulation was based on the experiments of Flauta et al 5,6 In the simulation, 100ϫ 100ϫ 500 cells of Ga atoms were bombarded with 10 000 N ions for each MC step corresponding to approximately 10 15 ions/ cm 2 . A surface atom or molecule was randomly chosen and bombarded by a randomly selected nitrogen ion from the Maxwell-Boltzmann distribution.…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…These particle fluxes can be utilized to synthesize thin films like ones prepared by magnetron sputtering devices. 4 The idea of forming a film by positive and negative ions containing sputtered neutral was tested by Flauta et al 5 They had shown that GaN film was formed using a nitrogen ͑N 2 ͒ filled plasma sputter ion source equipped with a Ga sputtering target. During their operation of the ion source current flowing through the liquid Ga target became unstable due to formation of GaN crust on metallic Ga, which showed a strong dependence on the local plasma parameters at the position of the target.…”

Section: Introductionmentioning

confidence: 99%

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Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Vasquez

Flauta²,

Wada

2008

Review of Scientific Instruments

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Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source.

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“…This decrease in the sputtered Ga was evident in the experiments of Flauta et al 5,6 The corresponding simulation result is shown in Fig. 4.…”

Section: Effect Of Sputteringsupporting

confidence: 52%

Section: Experimental Observationsmentioning

confidence: 99%

Section: Simulation Proceduresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Vasquez

Flauta²,

Wada

2008

Review of Scientific Instruments

Self Cite

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“…The Ga target erosion by nitridation is issued on conventional sputtering processes. 20) Similarly, the stoichiometric control was of a great importance in the pulse sputtering deposition (PSD) method. 21) In terms of (iii), addition of chlorine gas in CCP source improves the crystallinity of the GaN film even at low temperature by the selective etching of the low crystalline phase.…”

Section: Introductionmentioning

confidence: 99%

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl₂ gas mixtures and a separate supply of nitrogen precursors from a high density radical source

Tanide

Nakamura

Horikoshi

et al. 2019

Jpn. J. Appl. Phys.

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Hetero-epitaxial growth of a gallium nitride (GaN) film on an AlN(0 0 0 1) buffer layer on a sapphire(0 0 0 1) substrate was demonstrated by supplying gallium precursors and nitrogen radicals separately from two individually operated plasma sources to control the V/III supplying ratio precisely. The sources were a reactive Ar-Cl 2 -mixture plasma sputtering of a gallium target and a remote low inductance antenna (LIA) for N 2 -H 2 inductively coupled-plasma. Lateral growth of the GaN film was observed in 0.5%-Cl 2 -added Ar sputtering at a low growth temperature of 670 °C, whilst the growth mode coalesced at temperatures lower than 600 °C. With more than 2.0% of Cl 2 , no film was deposited due to etching by the reactive chlorine whenever the temperature was at 500 °C. At the growth temperature of 670 °C, crystallinity with narrow a X-ray rocking curve GaN (0 0 0 2) was obtained at the condition of 0.5% Cl 2 and 27.4% N 2 , even though the background pressure was 10 −4 Pa.

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Thin-film deposition of ZrN using a plasma sputter-type negative ion source

Ramos

Valmoria

2004

Vacuum

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Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitride

Cited by 4 publications

References 13 publications

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl₂ gas mixtures and a separate supply of nitrogen precursors from a high density radical source

Thin-film deposition of ZrN using a plasma sputter-type negative ion source

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Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitride

Cited by 4 publications

References 13 publications

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment

Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source

Thin-film deposition of ZrN using a plasma sputter-type negative ion source

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Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl₂ gas mixtures and a separate supply of nitrogen precursors from a high density radical source