1999
DOI: 10.1143/jjap.38.4520
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Plasma Copolymerization of Tetrafluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase

Abstract: Plasma copolymerization of hexamethyldisiloxane (HMDSO, (CH3)3-Si-O-Si-(CH3)3) and tetrafluoroethylene (CF2=CF2) was performed using an RF plasma enhanced chemical vapor deposition method, for its application to low dielectric constant intermetal dielectrics. Film structure was investigated by X-ray photoelectron spectroscopy and Fourier transform infrared (FT-IR) spectroscopy. Film composition was controlled gradually from that of fluorinated carbon to organic siloxane by changing the … Show more

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Cited by 41 publications
(28 citation statements)
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“…The refractive index of the PP-HMDSO film (n ¼ 1.49) is slightly lower than this maximum value, similar to the values measured by Bonnar et al using a variety of preparation conditions and substrates. [26] A similar observation (a nonmonotonic relationship of refractive index) was also reported by Shirafuji et al [42] ( Fig. 9 from Lee and Lee [41] ) for PcoP films of tetrafluoroethylene/HMDSO with no explanation given.…”
supporting
confidence: 82%
“…The refractive index of the PP-HMDSO film (n ¼ 1.49) is slightly lower than this maximum value, similar to the values measured by Bonnar et al using a variety of preparation conditions and substrates. [26] A similar observation (a nonmonotonic relationship of refractive index) was also reported by Shirafuji et al [42] ( Fig. 9 from Lee and Lee [41] ) for PcoP films of tetrafluoroethylene/HMDSO with no explanation given.…”
supporting
confidence: 82%
“…The appearance of some of the products identified in the plasma was rationalized by some authors [52,53] and can be summarized as follows. The initial decomposition of C 2 F 4 leads to the production of •…”
Section: Gas-phase Diagnosticsmentioning
confidence: 97%
“…7,8) On the other hand, amorphous fluorinated carbon (a-C:F) films, such as IMDs, which are prepared from several perfluorocarbon (PFC) gases, can be used as low-k materials without pores. [9][10][11][12][13][14][15][16][17][18][19][20][21] As these reports show, a-C:F film deposited by plasma-enhanced CVD (PECVD) generally has a dielectric constant of 2.0 -2.5, which may make it a promising candidate for next generation IMDs.…”
Section: Introductionmentioning
confidence: 99%