Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Dussart, Rémi; Tillocher, Thomas; Lefaucheux, Philippe; Boufnichel, Mohamed

doi:10.1088/0022-3727/47/12/123001

Cited by 155 publications

(121 citation statements)

References 101 publications

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“…Figure 1 gives a comprehensive morphology overview (30 elevation, cross-section and top-view) of the structures evolving after 2 min, 3 min, 5 min, and 10 min. In the discussion of the evolution of the Black Silicon structures, we will rely on the extensive studies of SF 6 -O 2 etching process by Dussart and co-workers 15,[24][25][26] as well as the pioneering work of Jansen, de Boer and co-workers who first described the Black Silicon process. 14,27 Generally two reactions occur in the presence of the SF 6 -O 2 plasma.…”

Section: A Structure Evolution During Etchingmentioning

confidence: 99%

“…Also, the exothermic nature of the fluorine etching reaction might contribute to weakening the passivation layer formation at the pore ground by local heating of the substrate. 25,26 Thus, in the course of further etching, the initial vertical pores quickly become deeper, but also wider, as the etching is not stopped completely at the sidewalls (images after 2 min). Eventually, the pores intersect and become more and more connected to each other (images after 3 min).…”

Section: A Structure Evolution During Etchingmentioning

confidence: 99%

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The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

112

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Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed

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Section: A Structure Evolution During Etchingmentioning

confidence: 99%

Section: A Structure Evolution During Etchingmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

112

View full text Add to dashboard Cite

show abstract

“…A previous report [22] demonstrated that graphene oxide shows homogenous and stable dispersion in NMP after After this etching step, the deep etching by cryogenic process was performed in an inductively coupled plasma reactor (Alcatel Micro Machining Systems ® , Paris, France). The protocol for sample preparation and further deep reactive ion etching (DRIE) by cryogenic process experiment has already been described by Tillocher et al [19][20][21]. The etching conditions for our samples are reported in Table 1.…”

Section: Electrodes Preparation and Coating Depositionmentioning

confidence: 99%

Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries

et al. 2017

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Abstract:The present study describes a novel strategy for preparing thin Silicon 2D and 3D electrodes for lithium ion batteries by a spin coating method. A homogeneous and stable suspension of Si nanoparticles (SiNPs) was prepared by dispersing the nanoparticles in 1-methyl-2-pyrrolidone (NMP) or in the room temperature ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (Pyr14TFSI). This proposed methodology was successfully employed to prepare 2D and 3D with different aspect ratios electrodes. Both 2D and 3D materials were then used as anode materials. The 2D SiNPs anodes exhibit a high reversible capacity, which is close to 3500 mAh·g −1 at C/10. For a higher discharge rate, the capacity of the 2D anode is considerably improved by dispersing the nanoparticles in Pyr14TFSI instead of NMP solvent. In order to further improve the anode performances, graphene particles were added to the SiNPs suspension. The anodes prepared using this suspension method exhibit relatively low columbic efficiency during the first few cycles (less than 30%) and low reversible capacity (2800 mAh·g −1 at C/10). The 3D SiNPs (NMP) electrode shows a higher intensity during cyclic voltammograms and a better stability under galvanostatic cycling than the 2D SiNPs (NMP) electrode.

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“…[1][2][3][4] Key parameters in optimizing an etching step are comprehensive for but not limited to selectivity with respect to the masking material, lateral erosion, and surface finishing. There are alternative approaches for the structuring of silicon, such as alkaline wet etching [5][6][7] or the more recently introduced metal-assisted chemical etching (MACE).…”

Section: Introductionmentioning

confidence: 99%

Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

Ashraf

Sundararajan

Grenci

2017

J. Micro/Nanolith. MEMS MOEMS

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Abstract. We report our findings in developing a low-power etching recipe using a newly acquired reactive-ion etching (RIE) tool (RIE-10NR, Samco, Japan), with the aim of achieving smooth and vertical sidewalls in micropatterned silicon substrate. We used a combination of CF 4 , SF 6 , and O 2 gases, which at low power (30 W) and low pressure (2 Pa) allowed for vertical silicon etching (aspect ratio ∼2). We used photoresist and silicon oxide as the etching masks. As it is a continuous etching process, scalloping effects were not present, which is contrary to the process done with an inductively coupled plasma-based "Bosch" approach. We also show a successful use of these microstructures as master mold in soft-lithographic techniques for producing devices in elastomeric materials that have applications in mechanobiology. To the best of our knowledge, the recipe we present here has the lowest combination of power and pressure for etching silicon with vertical profile using a standard, parallel plates RIE tool. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Cited by 155 publications

References 101 publications

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries

Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

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