Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

Horng, Ray−Hua; Chan, Chia Chi; Lee, Yih-Shing

doi:10.1016/s0169-4332(98)00911-8

Cited by 24 publications

(11 citation statements)

References 8 publications

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“…24,25 The Stoney equation is shown below, where E s and ν s are Young's modulus and Poisson's ratio of the silicon wafer, respectively. The model used to determine n and k utilized an amorphous dispersion model.…”

Section: Dielectric Film Characterizationsmentioning

confidence: 99%

“…Then, σ f can be calculated using the Stoney equation by taking into account the radius of curvature before and after film deposition. 24,25 The Stoney equation is shown below, where E s and ν s are Young's modulus and Poisson's ratio of the silicon wafer, respectively. d s is the thickness of the silicon wafer, and df is the thickness of dielectric film.…”

Section: Dielectric Film Characterizationsmentioning

confidence: 99%

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Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses

et al. 2019

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SiO2/SiC coatings were deposited onto ceramics disks using plasma‐enhanced chemical vapor deposition. The effects of deposition pressure and gas‐flow ratio on the refractive index, extinction coefficient, and SiC composition were studied. For the highest studied SiH4 to CH4 gas‐flow ratio of 1.5, the refractive index increased by 17% from 2.53 (at the wavelength of 845 nm) to 2.96 (at the wavelength of 400 nm). For the lowest studied SiH4 to CH4 gas‐flow ratio of 0.5, the refractive index only increased by 4% from 2.11 (at the wavelength of 845 nm) to 2.20 (at the wavelength of 400 nm). At higher deposition pressures, the variation in refractive index of the SiC coatings was significantly lower showing a slight increase from 1.93 (at a wavelength of 845 nm) to 1.96 at a wavelength of 400 nm. Except for the case of a low SiH4 to CH4 gas‐flow ratio of 0.5, for light with wavelengths ≤650 nm, the extinction coefficient of the SiC coatings increased significantly. Light with a wavelength >650 nm had an extinction coefficient near 0 in all cases. After annealing the sample at 400°C for 4 hours, hydrogen‐related bonds broke and the stress of the film was reduced from −245 to −71 MPa. By utilizing different thicknesses of SiC, the full standard dental shade guide was matched with the ΔE of each coated disk being less than 3.3 compared to the shade guide.

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Section: Dielectric Film Characterizationsmentioning

confidence: 99%

Section: Dielectric Film Characterizationsmentioning

confidence: 99%

Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses

et al. 2019

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“…It has been reported [148] that microchannel fabrication would be possible using a-SiC films deposited on Si, which serve first as an etch mask for bulk micromachining the fluidic channels and then as planarizing membranes to cover the microchannel. An in situ boron-doped a-SiC film has been used to fabricate a humidity sensor [149].…”

Section: Bulk Micromachined Devicesmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

100

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The superior mechanical strength, chemical stability, and excellent performance in high-temperature, high-power electronic components have made SiC an exceptional candidate to substitute silicon as the structural material for MEMS in harsh environments. As a consequence, SiC-based MEMS devices have been applied in high-temperature gas, temperature, and pressure sensors [6], high-g accelerometers [7], micromachined components in gas turbine engines [8]- [10], and corrosion-resistant biomedical devices [11], [12]. However, despite the significant progress that has been made to demonstrate the application of SiC in MEMS, the SiC-based microfabrication technology needs to be greatly improved before it becomes a manufacturable process and finds widespread use in commercial applications.…”

Section: Icroelectromechanical Systems (Mems)mentioning

confidence: 99%

Recent Progress Toward a Manufacturable Polycrystalline SiC Surface Micromachining Technology

et al. 2004

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In this paper, we present results of recent research from our laboratory directed toward a manufacturable SiC surface micromachining technology for microelectromechanical systems (MEMS) applications. These include the development of a low-pressure chemical vapor deposition and in situ doping processes for silicon carbide (SiC) films at relatively low temperatures, as well as the development of selective dry etching processes for SiC using nonmetallic masking materials. Doped polycrystalline SiC films are deposited at 800 C by using a precursor 1,3-disilabutane and dopant gas NH 3 , with the minimum resistivity of 26 m cm. Dry etching for SiC and its selectivity toward silicon dioxide and silicon nitride masking materials are investigated using SF 6 O 2 , HBr, and HBr Cl 2 transformer coupled plasmas. The etch rate, etch selectivity, and etch profile are characterized and compared for each etch chemistry. By combining the LPCVD and dry etching process with conventional microfabrication technologies, a multiuser SiC MEMS process is developed.Index Terms-Chemical vapor deposition, microelectromechanical systems (MEMS), reactive ion etching, silicon carbide (SiC), surface micromachining.

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Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

Cited by 24 publications

References 8 publications

Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses

Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Recent Progress Toward a Manufacturable Polycrystalline SiC Surface Micromachining Technology

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Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

Cited by 24 publications

References 8 publications

Demonstration of SiO2/SiC‐based protective coating for dental ceramic prostheses

Demonstration of SiO2/SiC‐based protective coating for dental ceramic prostheses

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Recent Progress Toward a Manufacturable Polycrystalline SiC Surface Micromachining Technology

Contact Info

Product

Resources

About

Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses

Demonstration of SiO₂/SiC‐based protective coating for dental ceramic prostheses