Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films

Koidl, P.; Wild, C.; Dischler, B.; Wagner, Jürgen; Ramsteiner, M.

doi:10.4028/www.scientific.net/msf.52-53.41

Cited by 246 publications

(141 citation statements)

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“…This has been achieved without severely compromising density, hardness and H content of the resulting films. The achieved mass densities along with the high hardness values entail improved film properties as compared to those obtained using RF-PECVD and ICP-PECVD methods [37,41]. Using our experimental data in combination with Monte-Carlo computer simulations and literature data we have suggested that: (i) dissociative reactions triggered by the interactions of energetic discharge electrons with hydrocarbon gas molecules is an important additional (to the sputtering cathode) source of film forming species and (ii) film microstructure and film hydrogen content are primarily controlled by interactions of energetic plasma species with surface and sub-surface layers of the growing film.…”

Section: Discussionmentioning

confidence: 89%

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

Aijaz¹,

Sarakinos²,

Raza³

et al. 2014

Diamond and Related Materials

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Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films, Diamond and related materials, 2014. 44, pp.117-122. http AbstractIn the present study we contribute to the understanding that is required for designing sputtering-based routes for high rate synthesis of hard and dense hydrogenated amorphous carbon (a-C:H) films. We compile and implement a strategy for synthesis of a-C:H thin films that entails coupling a hydrocarbon gas (acetylene) with high density discharges generated by the superposition of high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS). Appropriate control of discharge density (by tuning HiPIMS/DCMS power ratio), gas phase composition and energy of the ionized depositing species leads to a route capable of providing ten-fold increase in the deposition rate of a-C film growth compared to HiPIMS Ar discharge (Aijaz et al. Diamond and Related Materials 23 (2012) 1). This is achieved without significant incorporation of H (< 10 %) and with relatively high hardness (> 25 GPa) and mass density (~2.32 g/cm 3 ). Using our experimental data together with Monte-Carlo computer simulations and data from the literature we suggest that: (i) dissociative reactions triggered by the interactions of energetic discharge electrons with hydrocarbon gas molecules is an important additional (to the sputtering cathode) source of film forming species and (ii) film microstructure and film hydrogen content are primarily controlled by interactions of energetic plasma species with surface and sub-surface layers of the growing film.

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Section: Discussionmentioning

confidence: 89%

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

Aijaz¹,

Sarakinos²,

Raza³

et al. 2014

Diamond and Related Materials

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“…1,2 One method of preparing a-C:H is plasmaenhanced chemical vapor deposition. The film properties are strongly affected by the incident ion energy which in turn is determined by the gas pressure and the negative self-bias voltage V b which develops between the live electrode and the glow space.…”

Section: Introductionmentioning

confidence: 99%

EPR linewidth variation, spin relaxation times, and exchange in amorphous hydrogenated carbon

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Electron paramagnetic resonance ͑EPR͒ measurements have been made of amorphous hydrogenated carbon ͑a-C:H͒ films grown by plasma enhanced chemical vapor deposition ͑PECVD͒ with negative self-bias voltages V b in the approximate range 10-540 V. For V b Ͻ100 V, as the film changes from polymerlike to diamondlike, the changes in linewidth and shape are interpreted in terms of changes to two contributions-one due to dipolar interactions between the unpaired spins and one due to unresolved lines arising from hyperfine interactions with H 1 . The former yields a Lorentzian line, the latter a Gaussian, and the resultant spectrum has the Voigt shape. The empirical relation ⌬B pp G ͑in Gauss͒ϭ͑0.18Ϯ0.05͒ϫ͑at. % H) between the peak-to-peak Gaussian contribution ͑in Gauss͒ ⌬B pp G and the hydrogen content in atomic percentage is obtained. For V b Ͼ100 V the linewidth is shown to be dominated by the dipolar interactions and exchange and it decreases as V b increases; the change is shown to arise primarily from a change in the exchange interaction. Evidence for this comes from measurements which show that the spin-lattice relaxation time appreciably shortens and the spin-spin relaxation time lengthens as the bias voltage is increased. The magnitude and variation with bias of the linewidth are consistent with the EPR signal originating from the -type radicals.

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“…Our results point out that, microstructure generated in the films deposited here is concerned to the DLC arranged in an amorphous carbons alloys, containing considerable hydrogen in (%), that is possible to be an a-C:H or DLCH. According literature (10) , they are hard materials, containing about 40% of sp 3 sites, 30-40% of H, and and 10-20 GPa of hardness.…”

Section: Introductionmentioning

confidence: 99%

Study of a-C:H thin films grown by PIII in different times for Mechanical and Tribological applications

SantAna¹,

Santos²,

Silva³

et al. 2017

RBAV

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A Steel alloy (16MnCr5) used for automotive applications (engine components) was chosen as substrate to be covered by DLC films deposited by Plasma Immersion Ion Implantation. This kind of recovery is useful for improve its mechanical and tribological applications, more specific to increase surface hardness and to reduce the friction coefficient (µ). After polished and ultrasonicated, 16MnCr5 substrates were submitted to PIIID procedures for 100 W of radiofrequency power, from atmospheres supplied with 80% of methane and 20% of argon, keeping the work pressure fixed to 5.5 Pascal. Four different deposition times was chosen being of (1800 s, 3600 s, 5400 s and 7200 s). PIII parameters were (-3600 V, 30 µs and 300 Hz). It was investigated the effect of DLC properties over the substrates using Raman Spectroscopy (for Hydrogen content and microstructure analysis), Ultra Micro-Tribometer (for friction coefficient: µ) and Nanoindentation (hardness).

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Plasma Deposition, Properties and Structure of Amorphous Hydrogenated Carbon Films

Cited by 246 publications

References 0 publications

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin films

EPR linewidth variation, spin relaxation times, and exchange in amorphous hydrogenated carbon

Study of a-C:H thin films grown by PIII in different times for Mechanical and Tribological applications

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