Plasma developable photoresist systems based on chemical amplification.

Abstract

Ito, This paper reports work on two chemically amplified resist systems that can be developed in an oxygen plasma environment. These systems are based on the catalytic photogeneration of functional groups within the resist film which react, in a subsequent step, with a silylating agent that is delivered in the gas phase. As a result, the organosilicon species is selectively and covalently incorporated into the exposed regions of the resist film. When the silylated film is exposed to an oxygen plasma, the regions that do not contain the organosilicon species are etched to substrate, while those areas containing silicon are not etched. This generates a negative tone relief image. The chemical mechanisms and lithographic properties of these systems will he discussed.

Exceptional Light Sensitivity by Thiol–Ene Click Lithography

“…In the early 1980s, an entirely new and highly sensitive photoresist�chemically amplified photoresist (CAR)�proposed by Ito et al served as a chemical solution to overcome this serious challenge. 12,13 With the incorporation of photoacid generator (PAG) components and photoacid catalysis, CARs have significantly improved the sensitivity, with a dose hundreds of times lower than possible for deep-UV lithography. Moreover, CARs applied to 193 nm lithography 14,15 have continued to enable Moore's law and eventually dominate semiconductor manufacturing.…”

Desulfonylation of poly(4-hydroxystyrene sulfone) by vapor phase silylation

“…Vapor phase trimethylsilylation was performed by the procedure reported by MacDonald et al 4 They used TMSDMA as a silylation reagent, and PHOSt film was silylated by treating with 200 Torr of TMSDMA vapor. All the phenolic hydroxyl groups were trimethylsilylated at 100°C for 5 min.…”