Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl₂/Xe

Abstract

We investigated the plasma characteristics in an inductively coupled plasma (ICP) etching process using Cl2/Xe by means of a quadrupole mass spectrometer equipped with an ion energy analyzer. It was found that the ion energy of Cl+ increased with decreasing etching pressure, and the quantity of Cl+ increased with decreasing Cl2 flow rate. Ions including etching products such as Si+, Cl+, Xe+ and SiCl x + were observed in the etching plasma. It is suggested from the results of this experiment that the etching profile can be controlled by the in situ monitoring of the quantity of Cl+ ions.

Single-Cell Isolation and Size Sieving Using Microenclosure Array for Microbial Analysis

“…(11)(12)(13) In addition, we used an InP wafer as a base material of the microenclosure array for combination with optical devices as discussed in the last chapter. We used polystyrene beads of 1 and 3 μm diameters to confirm the efficiency of the proposed structure.…”

Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl2∕Ar plasma

“…10 The most obvious choice of passivation agent is aluminum oxide which is formed by background oxygen and residual moisture in the chamber. According to Urushido et al 16 and Matsutani et al, 21,22 molecular SiCl x radicals and molecular SiCl x + ions are formed during etching of Si with Cl 2 plasma. 10,11 Therefore aluminum oxide is very etch-resistant in Cl 2 plasma compared to gallium oxide, These results were related to the ability of BCl 3 to scavenge the oxygen in the chamber preventing the formation of the aluminum oxide and also increased physical sputtering by heavy BCl x + ions.…”

In situObservation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope

“…There have been reports on the etching characteristics in inductively coupled plasma (ICP) etching of InP. [1][2][3][4][5][6] There are some monitoring methods in dry etching technologies based on plasma measurement. For example, Langmuir probe or a double probe system enables measurement of plasma density.…”

“…The details of the ICP system were described in our previous papers. [1][2][3] We used both InP and GaAs substrates as samples, and Cl 2 as etching gas. Figure 1 shows a photograph and a schematic diagram of the observation system.…”