Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Kwon, Ohmin; Kwon, Se‐Hun; Park, Hyoung-Sang; Kang, Sang‐Won

doi:10.1149/1.1648612

Cited by 95 publications

(81 citation statements)

References 17 publications

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“…This is about twice as high as the growth obtained with other metalorganic precursors, such as Ru͑EtCp͒ 2 , DER, or EMR. 21,24,31 The growth-per-cycle is, however, quite similar to one of the new Ru ALD processes recently reported by Eom et al 30 Using the open-ring compound C 16 H 22 Ru, a similarly high growth-per-cycle of 0.9 Å was obtained at 220°C.…”

Section: Resultssupporting

confidence: 77%

“…12,31,39 Since the relative peak intensities resemble those of the reference spectrum of a powder sample the crystallites in the Ru layer have no dominant crystallographic orientation, although it cannot be excluded that the film prepared by plasma-assisted ALD might be slightly preferentially oriented in the ͑002͒ and ͑101͒ planes. In a comparison between Ru ALD with O 2 gas and NH 3 plasma, Kwon et al 24 also observed a ͑002͒ preferential orientation when a NH 3 plasma was used. The ͑002͒ orientation allows a more compact configuration of the Ru atoms than the other orientations and it is therefore possible that the crystallographic arrangement of the Ru atoms is influenced by additional energy delivered to the substrate by the plasma.…”

Section: 2431mentioning

confidence: 96%

“…For thermal ALD of Ru, rms surface roughness values are typically within the range of 0.3-3.8 nm ͑for film thicknesses ranging from 5 to 80 nm͒, 18,31,32,40 while for plasma-assisted ALD films even values as low as 0.7 nm have been reported for 50 nm thick films. 24 The results from the TEM measurements on the TiNcovered membranes are shown in Fig. 6.…”

Section: 2431mentioning

confidence: 99%

“…To address these issues, the choice of both the Ru precursor and the co-reactant has been re-evaluated. For example, the nucleation delay has been successfully addressed using NH 3 plasmas, 17,19,24 which more easily initiated the Ru growth and delivered smooth films. However, the growth-per-cycle remained low ͓0.25-0.8 Å / cycle ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Leick

Verkuijlen

Lamagna

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The metalorganic precursor cyclopentadienylethyl͑dicarbonyl͒ruthenium ͑CpRu͑CO͒ 2 Et͒ was used to develop an atomic layer deposition ͑ALD͒ process for ruthenium. O 2 gas and O 2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of ϳ1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of ϳ16 ⍀ cm. The O 2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

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Section: Resultssupporting

confidence: 77%

Section: 2431mentioning

confidence: 96%

Section: 2431mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Leick

Verkuijlen

Lamagna

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…7,8 Ammonia is also admixed in plasmas used for the synthesis of carbon nanotubes 9,10 and for ligand abstraction and nitridation during atomic layer deposition of metal nitrides. [11][12][13] One of the most important applications of NH 3 -based plasmas in industry to date is, however, the deposition of silicon nitride films. These films-generally deposited from ammonia-silane plasmashave numerous applications, ranging from dielectric materials in the microelectronics industry to antireflection coatings for crystalline silicon-based photovoltaics 14,15 and encapsulation films for organic light-emitting diodes.…”

Section: Introductionmentioning

confidence: 99%

Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet

Oever

Helden

Lamers

et al. 2005

Journal of Applied Physics

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The densities of NH and NH 2 radicals in an Ar-NH 3 plasma jet created by the expanding thermal plasma source were investigated for various source-operating conditions such as plasma current and NH 3 flow. The radicals were measured by cavity ringdown absorption spectroscopy using the ͑0,0͒ band of the A 3 ⌸ ← X 3 ⌺ − transition for NH and the ͑0,9,0͒-͑0,0,0͒ band of the Ã 2 A 1 ← X 2 B 1 transition for NH 2 . For NH, a kinetic gas temperature and rotational temperature of 1750± 100 and 1920± 100 K were found, respectively. The measurements revealed typical densities of 2.5 ϫ 10 12 cm −3 for the NH radical and 3.5ϫ 10 12 cm −3 for the NH 2 radical. From the combination of the data with ion density and NH 3 consumption measurements in the plasma as well as from a simple one-dimensional plug down model, the key production reactions for NH and NH 2 are discussed.

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Metals

2013

Atomic Layer Deposition

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Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films

Cited by 95 publications

References 17 publications

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet

Metals

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