2020
DOI: 10.1016/j.carbon.2020.05.057
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Plasma Enhanced Chemical Vapor Deposition synthesis of graphene-like structures from plasma state of CO2 gas

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Cited by 17 publications
(7 citation statements)
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“…This process can be used to manufacture large quantities of graphene ( Figure 1 ). Several research groups are currently working on the use of CVD to synthesize single-layer graphene and have demonstrated that CVD offers a promising route for the production of defect-free graphene [ 22 , 23 , 24 ]. Several CVD techniques, including thermal and plasma-enhanced techniques, can be used to make graphene [ 23 , 24 ].…”
Section: Production Of Graphenementioning
confidence: 99%
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“…This process can be used to manufacture large quantities of graphene ( Figure 1 ). Several research groups are currently working on the use of CVD to synthesize single-layer graphene and have demonstrated that CVD offers a promising route for the production of defect-free graphene [ 22 , 23 , 24 ]. Several CVD techniques, including thermal and plasma-enhanced techniques, can be used to make graphene [ 23 , 24 ].…”
Section: Production Of Graphenementioning
confidence: 99%
“…Several research groups are currently working on the use of CVD to synthesize single-layer graphene and have demonstrated that CVD offers a promising route for the production of defect-free graphene [ 22 , 23 , 24 ]. Several CVD techniques, including thermal and plasma-enhanced techniques, can be used to make graphene [ 23 , 24 ]. Process costs are an essential aspect of CVD processes, and plasma-enhanced CVD is the most cost-effective process to date [ 24 ].…”
Section: Production Of Graphenementioning
confidence: 99%
See 2 more Smart Citations
“…oxides, nitrides). Depending on the technical aspects of the process, various modifications of CVD methods are available, such as: vapor phase epitaxy (VPE), used for single crystal film deposition [14]; Plasma-Enhanced CVD (PECVD) or Plasma-Assisted CVD (PACVD), where plasma is used to induce or accelerate the decomposition or reaction factor of a material [15], low-pressure CVD (LPCVD) [16], for processes that do not require vacuum conditions as high as those in VPE; and metal-organic CVD (MOCVD), where the precursor gas is a metal-organic compound [17]. The main advantage of Plasma Assisted-or Plasma-Enhanced Chemical Vapor Deposition (PACVD/PECVD) over thermal CVD is the possibility it affords of reducing the activation temperature of the chemical reactions from above 700 • C, down to 300 − 500 • C.…”
Section: A Chemical Vapor Depositionmentioning
confidence: 99%