Plasma-enhanced chemical vapor deposition of graphene on copper substrates

Abstract

A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

Characteristic of silicon doped diamond like carbon thin films on surface properties and human serum albumin adsorption

“…This, probably due to the change in crystallite size of sp2 hybridised bonded clusters [24]. In addition, the decrease in the ID/IG ratio indicates an increase in the formation of atomic network and saturation of dangling bonds [25]. These findings are in a good agreement with results of XPS measurements.…”

Growth of dense CNT on the multilayer graphene film by the microwave plasma enhanced chemical vapor deposition technique and their field emission properties

“…[20][21][22][23] Although there have been reports of SiC assisted, single step growth of the tubular grievance cone-CNT hybrid, the deposition time is quite high for the whole process. 24 In such process, the edge of graphene based structure, e.g., onion-like and bowl-like acts as an incorporation site for the carbon adatoms.…”

“…The D peak is prominent in all the samples which may be correlated to the non-coalescence of the graphene domains as D band is associated with the edge defects and the direct exposer to the plasma also affects adversely the graphene lm. 23 The quality of Cu substrate also affects the graphene lm growth as it is preferably a defect free and smooth Cu substrate, which is achieved in multi-steps e.g. electroplating, annealing, etc.…”

“…18 The high amount of defect density in the PECVD grown graphene is due to the energetic particle from the plasma interacting with the growing graphene surface. 23 To remove this problem, a certain distance is maintained between the plasma and the deposition stage. 23 The I D /I G ratio has been found to be 1.9, 2.0, 1.7 and 1.3 for the sample deposited at different times, respectively.…”

“…23 To remove this problem, a certain distance is maintained between the plasma and the deposition stage. 23 The I D /I G ratio has been found to be 1.9, 2.0, 1.7 and 1.3 for the sample deposited at different times, respectively. The number of graphene layers can be calculated from the intensity ratio of 2D and G band.…”