Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors

Gottschalch, V.; Schmidt, Roland; Rheinländer, B.; Pudiš, Dušan; Hardt, Sebastian; Kvietkova, J.; Wagner, Gregory J.; Franzheld, R.

doi:10.1016/s0040-6090(02)00704-6

Cited by 24 publications

(29 citation statements)

References 29 publications

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“…The study of the films' physical structure or morphology has been limited, generally, to investigations of thickness and topography or roughness at the surface using techniques such as ellipsometry [3], and AFM [3,4,11,15 -17]. Ellipsometry is also used extensively to investigate the optical properties of the films [3,12,14,15,18,19]. Foerch and coworkers [20] have used surface plasmon spectroscopy to study changes in the structure of plasma-polymerized films of allylamine with exposure to solution environments.…”

Section: Introductionmentioning

confidence: 99%

Interface structure of photonic multilayers prepared by plasma enhanced chemical vapor deposition

Kim

Foster

Jiang

et al. 2004

Polymer

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Section: Introductionmentioning

confidence: 99%

Interface structure of photonic multilayers prepared by plasma enhanced chemical vapor deposition

Kim

Foster

Jiang

et al. 2004

Polymer

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“…We used plasma enhanced chemical vapour deposition (PECVD) to deposit a thin SiN x -layer (thickness $15 nm) on the substrate [49]. The SiN x was partially removed by electron beam lithography (EBL) definition of well-ordered circular openings in a electron sensitive resist and wet chemical etching using a diluted ammonium fluoride etching mixture (AF 87.5-12.5 VLSI Selectipur Merck).…”

Section: Gaas Nanowiresmentioning

confidence: 99%

GaAs nanowires grown by MOVPE

Bauer

Paetzelt

Gottschalch

et al. 2010

Physica Status Solidi (b)

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GaAs nanowire (NW) growth was studied by metal-organic vapour phase epitaxy (MOVPE). The vapour-liquid-solid (VLS) mechanism with gold-based alloy particles and the selective-area growth (SAG) mechanism on electron beam lithographically prepared SiN x /GaAs mask structures were applied. A special focus is set on thermodynamic aspects of the VLS process. The alloy particle formation and the influence of MOVPE growth parameters on the growth rate and the GaAs NW morphology are examined. Furthermore, the improvement of the real structure with particular interest on the twin formation is studied. Besides the commonly used continuous VLS growth mode also a pulsed VLS growth mode with alternating precursor supply is reported. Based on photoluminescence measurements the effect of strain in core/shell NW structures is confirmed. For the SAG mechanism the MOVPE growth parameters are determined and the real structure is described.

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“…Also, the use of silicon technology offers the possibility to integrate essential electronic circuits with optical devices in the same chip. For these reasons many optical devices are being developed with this technology, among them are the Bragg filters [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

“…Bragg filters have a great potential application in optoelectronic devices, such as planar microcavity light emitters and resonant-cavity enhanced photodiodes [8]. Furthermore, if these structures are fabricated with materials with high thermo-optic coefficients (TOE), temperature sensors can be fabricated.…”

Section: Introductionmentioning

confidence: 99%