Plasma-enhanced chemical vapour deposition of fluorinated silicon dioxide films using novel alkylsilanes

Laxman, Ravi Kumar; Hochberg, Arthur K.; Roberts, David A.; Vrtis, Raymond N.; Ovalle, Saul

doi:10.1002/(sici)1099-0712(199603)6:2<93::aid-amo231>3.0.co;2-z

Cited by 6 publications

(2 citation statements)

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“…Precise knowledge of the F content is an important issue in coatings with antiseptic functionality based on fluorinated carbon films (CF x ), where a correlation between hydrophobicity and bacterial anti-adherence performance with their F content has been reported [5]. The quantification of this element is also important in low refractive index films and low k interlayer dielectrics [6,7] based on fluorinated silica films (SiOF) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Simultaneous quantification of light elements in thin films deposited on Si substrates using proton EBS (Elastic Backscattering Spectroscopy)

Ferrer

Alcaire²,

Caballero-Hernández³

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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Quantification of light elements content in thin films is an important and difficult issue in many technological fields such as polymeric functional thin films, organic thin film devices, biomaterials, and doped semiconducting structures. Light elements are difficult to detect with techniques based on X-ray emission, such as energy dispersive analysis of X-rays (EDAX). Other techniques, like X-ray photoelectron spectroscopy (XPS), can easily quantify the content of light elements within a surface but often these surface measurements are not representative of the lights elements global composition of the thin film. Standard Rutherford backscattering spectroscopy (RBS), using alpha particles as probe projectiles, is not a good option to measure light elements deposited on heavier substrates composed of heavier elements like Si or glass. Nuclear Reaction Analysis (NRA) offers a good quantification method, but most of the nuclear reactions used are selective for the quantification of only one element, so several reactions and analysis are necessary to measure different elements. In this study, Elastic Backscattering Spectroscopy (EBS) using proton beams of 2.0 MeV simultaneously quantified different light elements (helium, carbon, nitrogen, oxygen, and fluorine) contained in thin films supported on silicon substrates. The capabilities of the proposed quantification method are illustrated with examples of the analysis for a series of thin film samples: amorphous silicon with helium bubbles, fluorinated silica, fluorinated diamond-like carbon and organic thin films. It is shown that this simple and versatile procedure allows the simultaneous quantification of light elements in thin films with thicknesses in the 200-500 nm range and contents lower than 10 at. %.

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Section: Introductionmentioning

confidence: 99%

Simultaneous quantification of light elements in thin films deposited on Si substrates using proton EBS (Elastic Backscattering Spectroscopy)

Ferrer

Alcaire²,

Caballero-Hernández³

et al. 2014

Nuclear Instruments and Methods in Physics Research Section B:

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“…Many authors have reported on film properties 2-7 and stability problems 3,[8][9][10] when the films are exposed to ambient atmosphere. In recent years, considerable effort has been devoted to the stabilization of their film properties 4,[11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Molecular-ion-beam-assisted deposition of stable SiOF films

Scherer¹,

Lacan²,

Brunet-Bruneau³

et al. 2004

SPIE Proceedings

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Recently 1 we reported on low refractive index fluorinated silica (SiOF) films obtained by a Molecular Ion Beam Assisted Deposition (MIBAD) process, using a fluorocarbon precursor in an End Hall ion source during evaporation of silica grains. These films were unstable due to moisture absorption and a subsequent chemical reaction, leading to an irreversible change in composition and increase of refractive index. In this paper we investigate an inert gas enhanced MIBAD process, involving the simultaneous use of a fluorocarbon precursor and an inert gas in the ion gun. Ion beam composition was analyzed by energy selective ion mass spectrometry. Addition of inert gas to the fluorocarbon precursor not only increases the total ion current, but also enhances the dissociation of the fluorocarbon precursor into smaller fragments. The films were characterized by ellipsometry, IR transmission spectroscopy and in situ and ex situ stress measurements. Time evolution of film properties was followed for several weeks. For a given fluorocarbon precursor flow rate, refractive index measured directly after deposition increases with increasing inert gas flow rate, while refractive index change with time is reduced. Fluorine content in the films is maximum for low inert gas flow rates, but decreases for higher flow rates to reach approximately the same level as for pure fluorocarbon ion beam. The observed refractive index stabilization for high inert gas flow rates can be explained by a change in film structure rather than film composition, i.e. by reduced film porosity due to high inert gas ion bombardment. With carefully chosen deposition conditions, stable films with low refractive index can be obtained.

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