Plasma‐enhanced chemical vapour deposition of fluorinated silicon dioxide films using novel alkylsilanes

Effect of hydrogen dilution on the remote plasma enhanced chemical vapor deposition of chlorinated SiO2 films

“…The excess of chlorine radicals during film growth initially explains the high deposition rate and high porosity of our films deposited without hydrogen. 17,18,[24][25][26][27][28] Thus, in our case, the high porosity and the excess of chlorine make the films highly prone to water absorption ͑hydrophilic͒ when they are exposed to ambient moisture. 37 This means that during the film growth process the SiCl x radicals and other chlorinated film precursors, such as SiCl 2 O, SiCl 3 O, etc., will tend to form a very rough growing surface with a tower-like structure.…”

“…1 However, modern ultralarge scale integrated ͑ULSI͒ circuit technologies require low temperature ͑Ͻ400°C͒ thin film deposition processes. 5,6,[17][18][19][20][21][22][23][24][25][26][27] On the other hand, low temperature chlorine or fluorine doped silicon dioxide films have received growing attention from ULSI circuit manufacturers because the halogen species in gate dielectrics can passivate sodium ion impurities, neutralize dangling bonds in the oxide bulk, and reduce the number of interface states at the Si-SiO 2 interface. 16 Among the plasma approaches, those for depositing halogen doped SiO 2 films 5,6,17-29 have recently attracted much interest because this material retains many of the structural properties of pure SiO 2 while offering potential advantages for several novel microelectronic applications.…”

“…16 Among the plasma approaches, those for depositing halogen doped SiO 2 films 5,6,17-29 have recently attracted much interest because this material retains many of the structural properties of pure SiO 2 while offering potential advantages for several novel microelectronic applications. 17,18,[24][25][26][27][28] Thus, it is important to study plasma deposition processes, chemistries, and deposition conditions that provide controllable incorporation of halogen atoms in silicon dioxide films without deterioration of their properties. 5,6,[17][18][19][20][21][22][23][24][25][26][27] On the other hand, low temperature chlorine or fluorine doped silicon dioxide films have received growing attention from ULSI circuit manufacturers because the halogen species in gate dielectrics can passivate sodium ion impurities, neutralize dangling bonds in the oxide bulk, and reduce the number of interface states at the Si-SiO 2 interface.…”