Plasma Etching Chemistry for Smoothening of Ultrananocrystalline Diamond Films

Jaramillo-Cabanzo, Daniel Felipe; Willing, Gerold A.; Sunkara, Mahendra

doi:10.1149/2.0081510ssl

Cited by 7 publications

(9 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7 The low degree of surface roughening is also key to fabricating microelectromechanical systems, where the stringent tolerance and topological precision are of most importance. [8][9][10] Extensive studies have been made to understand the mechanisms responsible for the formation and evolution of surface roughness during plasma etching of blank (or planar) Si substrates. 1,3,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] The mechanisms include the noise (or stochastic roughening), 1,[14][15][16][17]21 geometrical shadowing, 14,23 surface reemission of etchants, [15][16][17]19 micromasking by etch inhibitors, 3,20 and ion scattering/channeling.…”

mentioning

confidence: 99%

Surface smoothing during plasma etching of Si in Cl2

Nakazaki

Matsumoto

Tsuda

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy in the range Ei ≈ 20–500 eV. Experiments showed that smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces can be achieved by plasma etching in the smoothing mode (at high Ei) with some threshold for the initial roughness, above which laterally extended crater-like features were observed to evolve during smoothing. Monte Carlo simulations of the surface feature evolution indicated that the smoothing/non-roughening is attributed primarily to reduced effects of the ion scattering or reflection from microscopically roughened feature surfaces on incidence.

show abstract

mentioning

confidence: 99%

Surface smoothing during plasma etching of Si in Cl2

Nakazaki

Matsumoto

Tsuda

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The study of Jaramillo-Cabanzo et al 30 applied a mixture of hydrogen/oxygen (19:1 v/v) as reactant gases to etch the surface of ultrananocrystalline diamond films. In this paper, the authors used a cluster with a fully hydrogenated surface as a model object.…”

Section: Oxygen Adsorptionmentioning

confidence: 99%

“…It was experimentally determined that hydroxyl OH groups appeared during the initial stages of oxidation but disappeared at higher oxygen coverages. Since the study of Jaramillo-Cabanzo et al 30 The energy characteristics of the considered processes are summarized in Table 1. The DE value corresponds to the change in the total energy of the 'surface + particle' system due to the adsorption/desorption processes.…”

Section: Coh Desorptionmentioning

confidence: 99%

“…Jaramillo-Cabanzo et al 30 developed a controlled roughness reduction technique for ultrananocrystalline diamond films by the use of hydrogen gas/oxygen gas plasma. Pure oxygen, pure hydrogen and a hydrogen-oxygen mixture were used as an active gas environment.…”

Section: Introductionmentioning

confidence: 99%

“…The work of Jaramillo-Cabanzo et al 30 focused on the study of ultrananocrystalline diamond films grown by vapor deposition (CVD). It is known that one of the most critical surfaces of a CVD diamond is the C(100) surface.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hydrogen and Oxygen Atoms Interaction with the Point Defects on the C(100):H Diamond Surface

PonomarevOleg

LvovaNatalia

RyazanovaAnna

2017

Surface Innovations

View full text Add to dashboard Cite

This paper presents the results of quantum-chemical calculations of the adsorption and desorption activation energy bonding energy and the results of the interactions between particles (hydrogen (H), oxygen (O), methylene (CH 2 ) and carbon monoxide (CO)) with point defects on a reconstructed hydrogenated diamond surface C(100)-(2×1): a monovacancy, a divacancy and an adatom. The paper describes the most probable single acts of etching and restoration of an ordered surface. It is shown that the most likely single etching acts among the considered processes are the formation of carbon monoxide molecules from adatoms and oxygen from the gas phase. The most effective process of restoring an ordered surface is the attachment of methylene molecules to divacancy defects. It is assumed that some 'empty' dimer rows are formed as a result of surface vacancy defect etching. The results can be used to analyze the physical and chemical processes on the diamond surface during reactive ion etching using hydrogen-/oxygen-based plasma. NotationE act adsorption activation energy E b bond energy (heat of adsorption) E cl energy of the diamond cluster E des desorption activation energy E p energy of an isolated particle E saddle saddle point of the reaction coordinate E sys energy of the diamond cluster with adsorbed particle DE change in the total energy of the surface + particle system

show abstract