Plasma Etching of Refractory Gates for VLSI Applications

Chow, T. P.; Steckl, A. J.

doi:10.1149/1.2115251

Cited by 44 publications

(32 citation statements)

References 38 publications

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“…11) The etch rate of Mo was about 70~80 nm/min in SF6/O2 atmosphere in this study. Meanwhile, there was almost no thickness reduction for the a-IGZO film so that there was a high etch selectivity between the S/D metal and the a-IGZO film which is crucial for the large area application.…”

Section: Resultsmentioning

confidence: 68%

Effects of over-etching time on the characteristics of amorphous IGZO thin-film transistors with back-channel-etch structure

Wang

Song

Xiao

et al. 2015

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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Dry-etch for patterning Mo source/drain electrodes directly on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with back-channel-etch (BCE) structure was investigated. The over-etching time of reactive ion etching (RIE) had a great influence on the performance of the BCE a-IGZO TFTs. The a-IGZO TFTs with an appropriate over-etching time, such as 20s, was observed with a field effect mobility (μFE) of 6.51 cm 2 /V·s, a threshold voltage (VTH) of 0.38 V, a subthreshold swing (SS) of 0.39 V/Dec and an Ion/Ioff current ratio of 10 9 even when the channel length L decreased to as small as 5 μm. The BCE a-IGZO TFT also showed a good electrical stability with VTHshift of 1.09 V and -0.77 V under positive and negative gate bias stress, respectively.

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Section: Resultsmentioning

confidence: 68%

Effects of over-etching time on the characteristics of amorphous IGZO thin-film transistors with back-channel-etch structure

Wang

Song

Xiao

et al. 2015

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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“…Refractory metals (Mo, W, and Cr) have a wide variety of uses as thin films in the feibrication of microelectronic devices (see for example [21][22][23] 10"^® cm^ (after converting their nonstandard definition of a). The dissociation of refractory metal hexacarbonyls in low temperature matrices has been studied by infrared and UV-visible absorption spectroscopy [31,32].…”

Section: Carbonylsmentioning

confidence: 99%

Laser photodeposition of molybdenum oxide thin films from organometallic precursors

Olson

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“…This was Paper 166 presented at the Montreal, Quebec, Canada, Meeting of the Society, May [6][7][8][9][10][11] 1990. This was Paper 166 presented at the Montreal, Quebec, Canada, Meeting of the Society, May [6][7][8][9][10][11] 1990.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Plasma Etching of Tungsten Polycide Structures Using NF 3 ‐ Mixed Halocarbon Etchants

Parks

Jaccodine

1991

J. Electrochem. Soc.

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The feasibility of utilizing NF3-mixed halocarbon etchants to anisotropically etch tungsten polycide structures has been investigated. Chemical vapor deposited tungsten silicide and low-pressure chemical vapor deposited polysilicon have been etched using various mixtures of CF3C1, CF2C12, and CF3Br with NF~. Anisotropy, undercutting, and notching were evaluated using cross-sectional scanning electron microscopy. Etch rates and profiles were controlled by utilizing halocarbon-rich (>50%) binary halocarbon etchants. The etch rate data indicate that the volatility of the tungsten halide formed during etching influences the silicide etch rate and profile while the polymer forming ability of the halocarbon controls the etch characteristics of the polysilicon. BackgroundRefractory metals, such as tungsten and molybdenum, and their silicides have attracted considerable attention as materials for high-density, high-speed integrated circuits (ICs). Disilicides have been shown to be structurally compatible gate electrodes for SiQ (1). However, the electrical properties of the silicide/oxide interface are considered to be unacceptable for actual device applications (42, 43). Doped-polysilicon gates provide excellent interfacial characteristics but exhibit an unacceptably high resistance as linewidths shrink below 1 ~m. Silicide/polysilicon (polycide) structures exhibit low resistances (due to the silicide) while retaining the interfacial characteristics of the poly-Si. The silicides of Mo, W, Ta, and Ti have been considered as gate materials due to their rather good compatibility with IC processing requirements (2).Critical to the fabrication of useful silicide or polycide gates is the ability to obtain anisotropic etch profiles. Initial work focused on the use of fluorinated plasmas, based on CF4 (31, 43), SF6 (15, 28), and NF3 (11-15), primarily for etching Mo and MoSi2 (8-10). Chlorinated and mixed fluoride/chloride etchants were also reported (15-18). More recently, emphasis has been placed on the utilization of tungsten and WSi 2 in device fabrication (19-42), particularly in conjunction with polycide structures (31-35). Again, fluoride-(21-31) and chloride-based (36-42) etchants were utilized for patterning these materials. Plasmas containing CF4, SF6, CI~, and BC13 have been used for this purpose. Missing from the literature is a comprehensive study of the use of NF3 as a perspective etchant.Pure NF3 plasmas selectively but isotropically etch silicon and polysilicon over SiO~ (50:1 and 15:1, respectively) at rates greater than 1 ~/min (3-7). The addition of halofluorocarbons to NF3 (at >50%) provides sufficient sidewall passivation to give directional-to-anisotropic profiles (3-5). NF3 etching of NbSi, Mo, MoSi2, and polysilicon has also been reported (11-15). Data for NF3-etched WSi2 is limited. Etch rates on the order of 4000/~Jmin for WSi~ on GaAs (parallel plate RIE system), with etch selectivities of 100:1 and 25:1 to GaAs and SIO2, respectively, have.been re-) unless CC License in place (see abstract). ecsdl.or...

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Plasma Etching of Refractory Gates for VLSI Applications

Cited by 44 publications

References 38 publications

Effects of over-etching time on the characteristics of amorphous IGZO thin-film transistors with back-channel-etch structure

Effects of over-etching time on the characteristics of amorphous IGZO thin-film transistors with back-channel-etch structure

Laser photodeposition of molybdenum oxide thin films from organometallic precursors

Plasma Etching of Tungsten Polycide Structures Using NF 3 ‐ Mixed Halocarbon Etchants

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