Plasma extraction transit time oscillations in bipolar power devices

Gutsmann, B.; Mourick, P.; Silber, D.

doi:10.1016/s0038-1101(01)00184-8

Cited by 25 publications

(5 citation statements)

References 2 publications

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“…To generate turn-off oscillation, the frequency of the RF voltage applied to the IGBT chip and the length of the drift region in the IGBT chip must meet a certain condition. 2,5) The condition of the simulation model in Fig. 4 is identical to that in Fig.…”

Section: Simulation Modelmentioning

confidence: 99%

“…High-frequency voltage oscillation is occasionally observed in bipolar power semiconductors during turn-off operations. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The oscillation may not only threaten insulation in the devices but also cause electromagnetic interference (EMI) for external electronic devices. Siemieniec et al investigated the turn-off oscillations in diodes.…”

Section: Introductionmentioning

confidence: 99%

“…All experimental results on the turn-off oscillations indicated a transit time diode excitation mechanism, but obviously both impact ionization avalanche transit time (IMPATT) 16,17) and barrier injection transit time (BARITT) mechanisms 16,18) were excluded, since neither avalanche nor punch-through conditions were fulfilled. 2) The oscillations could be suppressed by a suitable layout modification, which, however, was a tedious experimental work in power module development.…”

Section: Introductionmentioning

confidence: 99%

“…Gutsmann et al proposed the plasma extraction transit time (PETT) oscillation theory. 2) The basic mechanism of the origin of PETT oscillations was related to that of the BARITT diode. The negative resistance mechanism was generated in a bipolar semiconductor at turn-off when the propagation time of packets of holes through the depletion layer and the frequency of the RF voltage applied to the semiconductor met a certain condition.…”

Section: Introductionmentioning

confidence: 99%

“…On the basis of the PETT oscillation theory, the inductance of the parasitic resonance circuit was changed to suppress the turn-off oscillation. [1][2][3][4][5][6][7]14) The author studied turn-off oscillation in actual-size experimental high-voltage insulated gate bipolar transistor (HVIGBT) modules. He demonstrated a practical method for suppressing the IGBT turn-off oscillation.…”

Section: Introductionmentioning

confidence: 99%

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Simulation Study on Insulated Gate Bipolar Transistor Turn-Off Oscillations

Fujita¹

2012

Jpn. J. Appl. Phys.

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High-frequency voltage oscillation is occasionally observed in insulated gate bipolar transistors during a turn-off operation. The turn-off oscillation generation was explained by the plasma extraction transit time oscillation theory. Its basic mechanism was the negative resistance creation. A negative RF power, which meant that the insulated gate bipolar transistor showed a “negative resistance”, was generated by the trapezoidal current density induced by holes and the RF voltage applied to the insulated gate bipolar transistor. However, the author showed that the induced current density oscillates with an almost negative phase compared with the RF voltage oscillation. He carried out an insulated gate bipolar transistor turn-off oscillation simulation using simplified simulation models. In this work, he showed the generation of the negative resistance and the turn-off oscillation in detail. He also showed the common and different points between his results and the plasma extraction transit time oscillation theory.

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Section: Simulation Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Simulation Study on Insulated Gate Bipolar Transistor Turn-Off Oscillations

Fujita¹

2012

Jpn. J. Appl. Phys.

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Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale

Luo

Peng

et al. 2017

Advanced Materials

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The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO films on Al O and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices.

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