Plasma flow induced local variation of dispersion constants of ITO‐films observed with spectroscopic imaging ellipsometry

Vaupel, M.; Vinnichenko, M.

doi:10.1002/pssc.200777772

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…Imaging ellipsometry, which combines high spatial resolution of optical microscopy with thin-film measurement capabilities of the ellipsometry, is developed to characterize the thin film pattern for physical and structural properties distribution [5][6][7]. In order to enhance the spectroscopic resolving capacity of imaging ellipsometry, spectroscopic imaging ellipsometry (SIE) is developed to characterize the spectroscopic, physical and spatial distribution for multi-layered nano-film patterns [8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Rotating compensator sampling for spectroscopic imaging ellipsometry

Meng

Jin

2011

Thin Solid Films

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In this work, a rotating compensator sampling for spectroscopic imaging ellipsometry (SIE) is presented and demonstrated by characterization of a SiO 2 nanofilm pattern on Si substrate. Experiment results within spectrum of 400-700 nm show that the rotating compensator sampling is valid for SIE to obtain the ellipsometric angle distributions ψ (x, y, λ) and Δ (x, y, λ) over the thin film pattern, the sampling times of ψ (x, y) and Δ (x, y) with 576 × 768 pixels under each wavelength is less than 8 s, the precision of fitting thickness of SiO 2 is about 0.2 nm and the lateral resolution is 60.9 μm × 24.6 μm in the parallel and perpendicular direction with respect to the incident plane.

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