2019
DOI: 10.1002/pip.3186
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Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Abstract: Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (P… Show more

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Cited by 15 publications
(6 citation statements)
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“…2 Considering the manufacturing steps, the current PERC solar cell production lines are seen to be adaptable to the PERT solar cells due to the many similarities in the fabrication techniques, such as surface texturing, diffusion process, removal of the heavily doped rear surface, deposition of dielectric layers (ALD: Al 2 O 3 and PECVD: SiN x ), and metal screen printing. 5 PERT solar cells have already been extensively studied in the literature with various fabrication routes, particularly based on the doping method, such as diffusion furnace, 6,7 ion implantation, [8][9][10][11] atmospheric pressure chemical vapor deposition (APCVD), 12 plasma-enhanced chemical vapor deposition (PECVD), 13 spin-on doping, 14,15 or their use together. One of the challenges for the fabrication of PERT solar cells is the existence of the two doping steps for the rear and front surfaces, which necessitate protecting one side while doping the other at least once in the use of double-side doping methods such as furnace diffusion.…”
Section: Introductionmentioning
confidence: 99%
“…2 Considering the manufacturing steps, the current PERC solar cell production lines are seen to be adaptable to the PERT solar cells due to the many similarities in the fabrication techniques, such as surface texturing, diffusion process, removal of the heavily doped rear surface, deposition of dielectric layers (ALD: Al 2 O 3 and PECVD: SiN x ), and metal screen printing. 5 PERT solar cells have already been extensively studied in the literature with various fabrication routes, particularly based on the doping method, such as diffusion furnace, 6,7 ion implantation, [8][9][10][11] atmospheric pressure chemical vapor deposition (APCVD), 12 plasma-enhanced chemical vapor deposition (PECVD), 13 spin-on doping, 14,15 or their use together. One of the challenges for the fabrication of PERT solar cells is the existence of the two doping steps for the rear and front surfaces, which necessitate protecting one side while doping the other at least once in the use of double-side doping methods such as furnace diffusion.…”
Section: Introductionmentioning
confidence: 99%
“…10,11 Ion irradiation can introduce nanocrystallization, ordered surface nanostructures, and latent tracks in the target materials. To date, ion-irradiation has been widely applied in a variety of fields such as solar cells, 12 biomedicine, 13 microelectronics 14–16 and renewable energy. 17…”
Section: Introductionmentioning
confidence: 99%
“…10,11 Ion irradiation can introduce nanocrystallization, ordered surface nanostructures, and latent tracks in the target materials. To date, ion-irradiation has been widely applied in a variety of fields such as solar cells, 12 bioand element doping, morphology control and material synthesis. Particularly, we have emphasized ion-irradiation advantages for boosting the performances of the device.…”
Section: Introductionmentioning
confidence: 99%
“…Ion beam modification techniques serve as an effective tool to provide controlled modification of two-dimensional materials for defect engineering and material functionalization. [24][25][26][27][28] Under controlled radiation conditions, different types of particles can be used to tune the properties of materials and produce desirable defects, while the introduction of irradiation-induced defects can significantly modulate the structural, chemical and physical properties of materials. [29][30][31][32][33][34] Different defect types and concentrations can be accurately obtained by controlling more precise irradiation parameters to achieve optimal modification of catalytic performance.…”
Section: Introductionmentioning
confidence: 99%