Plasma immersion ion implantation for silicon processing

Abstract

Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 mm technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII -fast process, implantation of the whole surface, low cost of ownership --several peculiarities -like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission --must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart-Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII , of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.

Surface modification of stainless steel by plasma-based fluorine and silver dual ion implantation and deposition

“…Compared to conventional ion implantation method, PBII-D equipment is smaller, less expensive, simpler to maintain and operate, and more compatible with "in-house operation" as opposed to the "outside service facility mode operation" which is prevalent at present in the ion beam processing industry 23,45) . This new technology can be used to deposit F and Ag on stainless steel dental devices during periodic dental appointments.…”

Mechanics of Smart-Cut® technology

“…SOI technology has substantial advantages over traditional bulk Si processing for a wide range of ULSI applications (Colinge, 1991;Yankov and M€ andl, 2001;Haisma and Spierings, 2002). A typical SOI system consists of a thin layer of single-crystal silicon supported by an underlying insulator (e.g., SiO 2 ).…”

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

“…As conventional implanters are not adapted to very low ion energies, implantation of doping elements via PBII processing with a collisional sheath is becoming a useful tool for shallow implantation. Plasma doping (or PLAD) thus constitutes, by far, the most important application of PBII in microelectronics [10,21,23,[126][127][128][129][130][131][132][133][134], along with the production of SOI (silicon on insulator) wafers with the smart-cut process [135][136][137][138].…”