Plasma immersion ion implantation using plasmas generated by radio frequency techniques

Abstract

Medium density (3×109 cm−3) and high density (3×1012 cm−3) plasmas, generated by low and medium power rf techniques, have been used for the implantation of 10–20 keV nitrogen ions into mild steel targets which were immersed in the plasma and biased to −20 kV. Use of the high density plasma resulted in significant damage to the surface by arcing. At medium densities the nitrogen was implanted to a depth and dose consistent with expectations, there was no arcing damage, and tests showed improved wear and hardness compatible with the level of implantation.

DLC Film Fabricated by a Composite Technique of Unbalanced Magnetron Sputtering and PIII

“…11,12) Compared with ion implantation, this technique solves the line-of-sight problem in the conventional ion implantation, 13,14) and also generates better adhesion to the substrate than other surface coating processes since there is no abrupt interface to suffer debonding. 15) Based on the research of * Corresponding author; E-mail: xcai@sjtu.edu.cn Tendys,10) the composite process of the unbalanced magnetron sputtering technique and PIII was employed to fabricate DLC gradient films in our present work. GXRD and Raman spectroscopy were used to investigate the structural character of the films.…”

“…Plasma immersion ion implantation (PIII), invented by Tendys et al, 10) has been used to make carbon films. 11,12) Compared with ion implantation, this technique solves the line-of-sight problem in the conventional ion implantation, 13,14) and also generates better adhesion to the substrate than other surface coating processes since there is no abrupt interface to suffer debonding.…”

Novel metal ion surface modification technique

“…At the same time, a unique means of carrying out ion implantation has been developed, principally by Conrad and co-workers [7,8] and also by others [9][10][11][12], in which the object to be implanted is immersed in a plasma and repetitively pulse-biased to high negative voltage, thereby accelerating ions across the plasma sheath into the substrate. This technique has been called plasma source (or plasma ir.imersion) ion implantation (psii or piii).…”

“…This technique has been called plasma source (or plasma ir.imersion) ion implantation (psii or piii). PHI with a gaseous plasma has been shown to be an effective tool for both metallurgical [7][8][9] and semiconductor [10][11][12] ion implantation.…”

Effects of plasma immersion ion implantation on fatigue properties of titanium alloy surfaces

“…Threedimensional characteristic is one of the reason for such possibility, i.e. the entire surface of parts with complex shapes can be treated without changing their masses (13,14) . Independent temperature control is another advantage, since simultaneous heating of the substrate is crucial for the treatment of Ti alloys to promote diffusion of the implanted ions (15) .…”