Plasma-Less Photoresist Stripping

Takahashi, Hiroaki

doi:10.1149/1.2779378

Cited by 6 publications

(2 citation statements)

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“…Several stripping methods have been studied in many years, [7][8][9] and in these days, single wafer cleaning has more interests than batch cleaning system in term of avoiding cross-contamination from wafer to wafer. [10][11][12][13][14] In typical 20-nm device fabrication, a carbonized hard crust layer is formed on the surface of the photoresist from HDI at surface concentrations of greater than 1 × 10 15 atoms/cm 2 . 15 Because this layer is quite difficult to remove or dissolve using standard chemicals, such as sulfuric-peroxide mixture (SPM), it has become a critical issue in wet single-wafer processing.…”

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confidence: 99%

Stripping of High-Dose Ion-Implanted Photoresist Using a Combination of Dry and Wet Single-Wafer Processing

Kinoshita¹,

Engesser²

2012

ECS J. Solid State Sci. Technol.

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High dosed ion implanted (HDI) photoresist is well-known to be difficult to remove by conventional wet stripping e.g. sulfuric–peroxide mixture without substrate loss because of their carbonized crust layer. To overcome this issue, several methods are proposed such as dry etch + wet, assist of physical cleaning. In this paper, a new method to strip HDI photoresist using a combination of dry and wet processing in the same chamber is introduced to achieve HDI photoresist removal without substrate loss. A new process consists of two steps. The first process removes the carbonized crust layer by atmospheric-pressure inductively coupled hydrogen plasma, and the second process removes remaining the bulk photoresist by a sulfuric–ozone mixture. The new process enables removal of the HDI photoresist without any substrate loss, and with significantly shorter times.

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confidence: 99%

Stripping of High-Dose Ion-Implanted Photoresist Using a Combination of Dry and Wet Single-Wafer Processing

Kinoshita¹,

Engesser²

2012

ECS J. Solid State Sci. Technol.

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“…In a standard CMOS process flow, two source/drain ion implantation steps are used. Stripping of photoresists (PR) exposed to high dose (>1E15/cm 2 ) ion beams is one of the most challenging steps in Front End of the Line (FEOL) processing [1]. This is due to a refractory crust that forms on the resist surface during ion implantation [2].…”

mentioning

confidence: 99%