Plasma over-treatment effect on the MOCVD-TiN contact glue layer

Thermal stability of N2–H2plasma-treated metal-organic-vapor-deposition TiN in a W/TiN/Ti/Si system

“…The influence of N 2 -H 2 plasma treatments on the chemical and micro-structural properties of the TDMAT-based MOCVD TiN has been extensively examined by Riedel et al [7] and Chang et al [8]. From their reports, the plasma treatment significantly changes the amorphous structure of the asdeposited TiN films into a polycrystalline state with a strong densification effect.…”

“…Unlike depositions using inorganic sources, such as TiCl 4 , significant amounts of carbon and oxygen impurities are always found in the metal-organic CVD (MOCVD) film; therefore, it normally leads to an amorphous or a nanocrystalline phase formation of TiC x N y O z [6]. For this reason, a post-deposition or in situ treatment scheme using N 2 -H 2 plasma has been intensively investigated in order to enhance the film properties; these methods effectively remove most of the impurities, thereby recovering the crystallinity of the films [7,8]. However, most study has been done on the effect of plasma treatment on the film properties, such as chemical composition, film density, microstructure, electrical resistivity, etc that depend on the plasma conditions.…”