Plasma parameter investigation during plasma-enhanced chemical vapor deposition of silicon-containing diamond-like carbon films

Grotjahn, T.; Aslanbas, Özgür; Mee, Manuel; König, Mathias; Meier, Sven

doi:10.1016/j.surfcoat.2013.09.035

Cited by 14 publications

(11 citation statements)

References 95 publications

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“…In contrast, when ammonia gas was introduced into the gas mixture, the dominating emission lines over the OES spectrum ( Figure 1b) were quite different from those of the glow discharge of the TMS-O 2 gas mixture. As referred to in the inset OES spectrum of Figure 1b, measured from the pure ammonia plasma, the peaks at about 314, 335, 356, and 390 nm were attributed to the transition lines of the nitrogen molecules (N 2 ) and the ions of the nitrogen molecules (N 2 + ) [23,24]. The emission peaks at 426, 485, and 655 nm, in turn, corresponded to the molecular and atomic emissions of excited H 2 , H β , H α [20,25].…”

Section: Resultsmentioning

confidence: 81%

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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Abstract:The gas barrier property of a silicon oxide (SiO x ) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES). Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N 2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiO x N y ) film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m 2 /day) deposited onto the polyethylene terephthalate (PET) substrate was thus greatly improved to 0.06 g/m 2 /day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

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Section: Resultsmentioning

confidence: 81%

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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“…Using mass flow controllers the gas flow rates can be adjusted. The process pressure is induced with a rotary vane pump (Pfeiffer DUO 65C) and a turbo molecular pump (Leybold Turbovac 450) . Improved adhesion of the coating is realized using a 500 nm thick silicon-based TMS undercoating (trimethylsilyl).…”

Section: Experimental Sectionmentioning

confidence: 99%

Macroscopic Superlow Friction of Steel and Diamond-Like Carbon Lubricated with a Formanisotropic 1,3-Diketone

et al. 2017

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Energy dissipation due to friction and wear is reducing the energy efficiency and reliability of mechanical systems. Thus, great efforts are being made to minimize friction for technical applications. In our present work, we investigate the tribological behavior of stainless steel 100Cr6 with a-C:H and a-C:H:Si coating lubricated with a surface-active formanisotropic 1,3-diketone. The results show that superlow friction can be achieved on the macroscale using a steel 100Cr6 self pairing (COF ∼ 0.005) and with 100Cr6 in combination with a-C:H coating (COF ∼ 0.008). Furthermore, the replacement of steel with a-C:H coating leads to a considerable decrease of wear. The reduced COF arises from the chemical interaction of the lubricant with the surface and nascent iron ions. It was found that interfacial parameters correlate with tribological results. In addition, the alignment of the formanisotropic molecules in the tribological contact at thin-film lubrication leads to an anisotropic viscosity with a minimum shear resistance in sliding direction. Atomistic simulation of tribochemical interactions was conducted to derive a friction model based on the thin-film lubrication theory. This investigation indicates the potential to substantially reduce friction and wear using this fluid in real technical applications.

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“…Independently controlled process variables, such as power, pressure, and gas composition, determine the internal plasma variables, such as the electron temperature, electron density, and species fluxes to various surfaces, which in turn affect the composition and properties of the films deposited via PECVD [1,6,7]. Understanding interrelations between these various quantities informs process parameter choices so that particle fluxes, surface reactions, and film properties can be controlled rationally [8,9].…”

Section: Introductionmentioning

confidence: 99%

Plasma diagnostics and modeling of lithium-containing plasmas

Ono¹,

Ganguly²,

Tu³

et al. 2022

J. Phys. D: Appl. Phys.

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Thin-film deposition from chemically reactive multi-component plasmas is complex, and the lack of electron collision cross sections for even the most common metalorganic precursors and their fragments complicates their modeling based on fundamental plasma physics. This study focuses on understanding the plasma physics and chemistry in argon (Ar) plasmas containing lithium bis (trimethylsilyl) amide used to deposit LixSiy thin films. These films are emerging as potential solid electrolytes for lithium-ion batteries, and the Li-to-Si ratio is a crucial parameter to enhance their ionic conductivity. We deposited LixSiy films in an axial flow-through plasma reactor and studied the factors that determine the variation of the Li-to-Si ratio in films deposited at various points on a substrate spanning the entire reactor axis. While the Li-to-Si ratio is 1:2 in the precursor, the Li-to-Si ratio is as high as 3:1 in films deposited near the plasma entrance and decreases to 1:1 for films deposited downstream. Optical emission from the plasma is dominated by Li emission near the entrance, but Li emission disappears downstream, which we attribute to the complete consumption of the precursor. We hypothesized that the axially decreasing precursor concentration affects the electron energy distribution function in a way that causes different dissociation efficiencies for the production of Li and Si. We used Li line intensities to estimate the local precursor concentration and Ar line ratios to estimate the local reduced electric field to test this hypothesis. This analysis suggests that the mean electron energy increases along the reactor axis with decreasing precursor concentration. The decreasing Li-to-Si ratio with axially decreasing precursor concentration may be explained by Li release from the precursor having lower threshold energy than Si release.

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Plasma parameter investigation during plasma-enhanced chemical vapor deposition of silicon-containing diamond-like carbon films

Cited by 14 publications

References 95 publications

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Macroscopic Superlow Friction of Steel and Diamond-Like Carbon Lubricated with a Formanisotropic 1,3-Diketone

Plasma diagnostics and modeling of lithium-containing plasmas

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