Plasma Parameters and Etching Characteristics of SiOxNy Films in CF4 + O2 + X (X = C4F8 or CF2Br2) Gas Mixtures

Nam, Yunho; Efremov, Alexander; Lee, Byung Jun; Kwon, Kwang‐Ho

doi:10.3390/ma13235476

Cited by 3 publications

(2 citation statements)

References 47 publications

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“…The latter were represented either by one fluorocarbon component (CF 4 , C 4 F 8 , CHF 3 ) with Ar and O 2 or by two fluorocarbon components with one additive gas. In contrast to “classical” works [ 39 , 41 , 75 , 76 ], we did not use surface diagnostics methods, did not measure the polymer film thickness and did not investigate its chemical structure. Instead, we performed a phenomenological study based on correlations between experimentally obtained etching kinetics and model-predicted gas-phase plasma characteristics (ion energy, ion flux, densities and fluxes of F atoms and polymerizing radicals) providing various heterogeneous effects.…”

Section: Discussionmentioning

confidence: 99%

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

2021

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This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (СF4, C4F8, CHF3) with Ar and O2 or by two fluorocarbon components with one additive gas. The investigation scheme included plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry and heterogeneous reaction kinetics. The combination of these methods allowed one (a) to figure out key processes which determine the steady-state plasma parameters and densities of active species; (b) to understand relationships between processing conditions and basic heterogeneous process kinetics; (c) to analyze etching mechanisms in terms of process-condition-dependent effective reaction probability and etching yield; and (d) to suggest the set gas-phase-related parameters (fluxes and flux-to-flux ratios) to control the thickness of the fluorocarbon polymer film and the change in the etching/polymerization balance. It was shown that non-monotonic etching rates as functions of gas mixing ratios may result from monotonic but opposite changes in F atoms flux and effective reaction probability. The latter depends either on the fluorocarbon film thickness (in high-polymerizing and oxygen-less gas systems) or on heterogeneous processes with a participation of O atoms (in oxygen-containing plasmas). It was suggested that an increase in O2 fraction in a feed gas may suppress the effective reaction probability through decreasing amounts of free adsorption sites and oxidation of surface atoms.

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Section: Discussionmentioning

confidence: 99%

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

2021

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“…This indicates that when the Ar flow rate was fixed, even when the CF 4 /C 4 F 8 ratio increased, the ion density and UV intensity in the plasma did not increase significantly. In contrast, a change in the CF 4 /C 4 F 8 ratio influenced the radical species formed in the plasma [19]. OES was performed to confirm the changes in these radicals.…”

Section: Fluorocarbon Gas Change In Plasmamentioning

confidence: 99%

Etch Damage of SiOC Thin Films in an Inductively Coupled Plasma Using Low-Frequency

Kim,

Choi,

Lee

2024

Appl. Sci. Converg. Technol.

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In this study, we evaluate the etch damage of silicon oxycarbide (SiOC) films in an inductively coupled plasma using a 2 MHz bias power frequency and compare it to the damage in a 13.56 MHz bias power system. For this study, CF 4 /He/Ar or CF 4 /C 4 F 8 /Ar mixed gas plasmas were used. To evaluate the plasma-exposed damage, ellipsometric spectroscopy (ellipsometry) and Fourier-transform infrared (FT-IR) spectroscopy were performed. The dielectric constant and Si-O/C-O area % ratios were extracted from ellipsometry and FT-IR results, respectively. We confirmed that ions among the plasma parameters, such as ions, ultraviolet, and radicals, have a significant impact on thin-film properties. Although the etching rate of the oxide film at 2 MHz was higher than that at a 13.56 MHz bias frequency, it was confirmed that the damage to the SiOC thin film at 2 MHz was lower than that at 13.56 MHz. In addition, FT-IR analysis proved to be a useful tool for evaluating the plasma damage in SiOC thin films. The polymer thickness was calculated through X-ray photoelectron spectroscopy. Based on these results, the effect of the polymer on the change in the Si-O/C-O ratio is discussed.

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CF4 plasma-treated porous silicon nanowire arrays laminated with MnO2 nanoflakes for asymmetric pseudocapacitors

Bagal

Chodankar

Waseem

et al. 2021

Chemical Engineering Journal

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Plasma Parameters and Etching Characteristics of SiOxNy Films in CF4 + O2 + X (X = C4F8 or CF2Br2) Gas Mixtures

Cited by 3 publications

References 47 publications

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures

Etch Damage of SiOC Thin Films in an Inductively Coupled Plasma Using Low-Frequency

CF4 plasma-treated porous silicon nanowire arrays laminated with MnO2 nanoflakes for asymmetric pseudocapacitors

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