Plasma process optimization for N-type doping applications

Raj, Deven; Persing, H.; Salimian, S.; Lacey, Kerry; Qin, Shu; Hu, Jeff Y.; McTeer, Allen

doi:10.1063/1.4766491

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…A novel doping technology called Plasma doping has been considered as an effective solution to achieve conformal doping distribution on 3D structures [119][120][121][122][123]. The technique is designed differently with traditional ion implanter where no species separate components in this system.…”

Section: Conformal Doping On 3d Structure Devicesmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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Section: Conformal Doping On 3d Structure Devicesmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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“…Recently, trap generation on the surface of the fin has also been reported, which aggravates both on-and off-state characteristics [162]. In addition, modeling plasma doping is extremely difficult since this process is inherently a balance of several mechanisms including implantation, deposition, knock-in and surface sputtering/etching [180,[182][183][184][185]. The competition and balance among all these concurrent processes can be optimized by varying the large amount of plasma doping parameters such as energy, dose, power, bias pulsing, pressure and gas dilution ratios, in order to obtain the desired dopant profile characteristics [180].…”

Section: Gatementioning

confidence: 99%

Improved physical models for advanced silicon device processing

Pelaz

Marqués

Aboy

et al. 2017

Materials Science in Semiconductor Processing

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We review atomistic modeling approaches for issues related to ion implantation and annealing in advanced device processing. We describe how models have been upgraded to capture physical mechanisms in more detail as a response to the accuracy demanded in modern process and device modeling. Implantation and damage models based on the binary collision approximation have been improved to describe the direct formation of amorphous pockets for heavy or molecular ions. The use of amorphizing implants followed by solid phase epitaxial regrowth has motivated the development of detailed models that account for amorphization and recrystallization, considering the influence of crystal orientation and stress conditions. We apply simulations to describe the role of implant parameters to minimize residual damage, and we address doping issues that arise in non-planar structures such as FinFETs.

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