Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)

Martin, Andreas

doi:10.1109/irps48227.2022.9764556

2022 IEEE International Reliability Physics Symposium (IRPS) 2022

DOI: 10.1109/irps48227.2022.9764556

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Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)

Andreas Martin

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Cited by 6 publications

References 41 publications

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Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation

Martin

Berger

Kamp

et al. 2022

2022 IEEE International Integrated Reliability Workshop (IIRW)

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Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)

Cited by 6 publications

References 41 publications

Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation

Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation

Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID)

Modeling Plasma-Induced Damage During the Dry Etching of Silicon

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