2008
DOI: 10.4191/kcers.2008.45.1.707
|View full text |Cite
|
Sign up to set email alerts
|

Plasma Resistances of Yttria Deposited by EB-PVD Method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2009
2009
2025
2025

Publication Types

Select...
5
2

Relationship

1
6

Authors

Journals

citations
Cited by 17 publications
(4 citation statements)
references
References 5 publications
0
4
0
Order By: Relevance
“…Given that defect reduction attracts much attention as a result of development in semiconductor technology, this study tested the stability against plasma in Al 2 O 3 and Y 2 O 3 with a view to reduce A1 particles known as a major cause of chamber particles in dry etcher process and to replace one of Al sources, Al 2 ceramic materials formed in optimization process underwent a test for durability against 'F' series plasma. To sum up, Y 2 O 3 was found to be approximately 10 times as stable as Al 2 O 3 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Given that defect reduction attracts much attention as a result of development in semiconductor technology, this study tested the stability against plasma in Al 2 O 3 and Y 2 O 3 with a view to reduce A1 particles known as a major cause of chamber particles in dry etcher process and to replace one of Al sources, Al 2 ceramic materials formed in optimization process underwent a test for durability against 'F' series plasma. To sum up, Y 2 O 3 was found to be approximately 10 times as stable as Al 2 O 3 .…”
Section: Resultsmentioning
confidence: 99%
“…As the environment for semiconductor process calls for high density plasma and high productivity, a material with greater plasma resistance that that of Alumina (Al 2 O 3 ) material is needed. Yttria (Y 2 O 3 ) is considered a new material to meet the demand [2].…”
Section: Introductionmentioning
confidence: 99%
“…17,18) However, in SPS, because of differences in the masses of the molten droplets, the shorter solidification time of the molten droplet compared to that of the molten droplet in the conventional plasma spray may be the cause of the monoclinic phase development. In previous the investigation of the electron beam PVD of Y 2 O 3 , 19,20) monoclinic phase formation of the Y 2 O 3 coating was believed to be due to the effect of the quenching of the deposited Y 2 O 3 atoms.…”
Section: Crystalline Structures and O/y Ratio Of Y 2 Omentioning
confidence: 99%
“…Conventionally, plasma spraying was mainly used for yttria coating, and chemical vapor deposition (CVD) and physical vapor deposition (PVD) coating methods were reported to be used [3,4]. However, the plasma spraying, easily forms cracks due to the thermal expansion coefficient difference with the substrate and is limited in forming high-density coating layers.…”
Section: Introductionmentioning
confidence: 99%