Plasma screening of the fundamental absorption edge in crystals of Bi2Te3-Sb2Te3 solid solutions with more than 80 mol % Sb2Te3

Степанов, Н. П.; Kalashnikov, A. A.; Ulashkevich, Yu. V.

doi:10.1134/s0030400x14090240

Cited by 7 publications

(6 citation statements)

References 5 publications

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“…Other electronic causes, such as recently reported intraband transitions in the frequency range of our observations, cannot be ruled out completely. Only if the plasma frequency is slightly below this transition, it becomes discernible in the IR reflection spectra.…”

contrasting

confidence: 52%

“…Because the near-field optical microscope is extremely sensitive to small variations in the permittivity close to a resonance (ϵ ≈ −1...–3), indeed a localized modeonly occurring in certain areas of the samplecould potentially lead to a shifted response, even with a fixed charge carrier concentration. However, such a localized mode suggested in ref is not observed for pure Sb 2 Te 3 . Instead, it only appears in solid solutions of Sb 2 Te 3 with Bi 2 Te 3 or when doping with Sn.…”

mentioning

confidence: 76%

“…Reflectivity measurements have shown that Sb 2 Te 3 , which is not intentionally doped, has a plasma edge around 1000 cm –1 . − This plasma edge originates from an excess hole concentration that develops due to negatively charged antisite defects (Sb on a Te position) . Typical free charge carrier concentrations for Sb 2 Te 3 are between 10 19 cm –3 and 10 21 cm –3 . − …”

mentioning

confidence: 99%

“…Supporting Information). Because the mid-IR dielectric properties of Sb 2 Te 3 are dominated by the Drude contribution, and the plasma frequency can be supposed within the investigated spectral range, − the optical contrasts are interpreted as domains with different charge carrier density…”

mentioning

confidence: 99%

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Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

et al. 2015

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We report nanoscale-resolved optical investigations on the local material properties of Sb2Te3 hexagonal platelets grown by solvothermal synthesis. Using mid-infrared near-field microscopy, we find a highly symmetric pattern, which is correlated to a growth spiral and which extends over the entire platelet. As the origin of the optical contrast, we identify domains with different densities of charge carriers. On Sb2Te3 samples grown by other means, we did not find a comparable domain structure.

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confidence: 52%

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confidence: 76%

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confidence: 99%

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confidence: 99%

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Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

et al. 2015

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“…The additional peak around ν = 1250 cm −1 could in principle be related to interband transitions observed for Sb 2 Te 3 in infrared reflectivity spectra between 1250 and 2000 cm −1 . 39 As these transitions were reported to show a broad peak in far-field spectra (several 100 cm −1 ), it appears unreasonable to link them to the sharp (several 10 cm −1 ) features observed in the near-field spectra. Very recently Schmidt et al observed using s-SNOM inter-subband transitions due to vertical confinement in few-layer WSe 2 .…”

Section: Acs Applied Nano Materialsmentioning

confidence: 98%

Sb₂Te₃ Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications

Lewin

Mester

Saltzmann

et al. 2018

ACS Appl. Nano Mater.

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Sb 2 Te 3 exhibits a plethora of fundamentally relevant electronic phenomena enabling electronic phase change memory cells, thermoelectric devices, and three-dimensional topological insulator structures. Thus, the controlled growth of nanostructures and thin films with well-defined electronic properties is of utmost importance. Previously, our group observed symmetric infrared domains in hexagonal Sb 2 Te 3 nanoplatelets from a solvothermal chemical synthesis. The relative optical contrast observed was indirectly linked to the formation of regions with different defect densities (charge carrier concentrations). This raises two major questions, which we answer in this study: Is the domain formation restricted to the specific platelet growth process? No! Do the infrared spectra of both domains really follow a "Drude-like" free charge carrier response? Yes! By controlling the initial water concentration, we promote the growth of the nanoplatelets in the c-direction and tune the morphology from platelet-like to octahedra-like. Although the growth mode changes from spiral growth to layer-by-layer, similar infrared domains are identified using scattering-type scanning near-field optical microscopy (s-SNOM). Furthermore, we also reproduced the formation of symmetric infrared domains in thin, high quality crystalline films grown using molecular beam epitaxy (MBE). Normalized infrared near-field spectra of smaller Sb 2 Te 3 nanoparticles reveal a relative shift of the plasma frequency in both domains. These findings demonstrate that the formation of domains with different charge carrier properties is an intrinsic material property of Sb 2 Te 3 and might strongly influence all of its electronic applications.

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Sb₂Te₃/MoS₂ Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

Chang

Hatayama

Saito

et al. 2023

Adv Elect Materials

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Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility in the atomically thin channel regime. However, high contact resistance between source/drain electrodes and TMDC channels hinders the TMDCs applications in the very‐large‐scale integration (VLSI) field. Here, this work reports atomically aligned van der Waals (vdW) junction fabrications through thermal‐induced crystallization of layered Sb2Te3 electrodes on monolayer MoS2 using VLSI‐compatible physical vapor deposition and annealing processes. Due to Fermi‐level unpinning with a small band offset between Sb2Te3 and MoS2 and small density of state of Sb2Te3, better device performance is demonstrated on MoS2 MOSFETs with Sb2Te3/W contact than that of Sb/W contact. Moreover, the ideal vdW junctions are found to demonstrate extreme high‐thermal robustness. No intermixing at the Sb2Te3/MoS2 interface or crystallinity degradation of Sb2Te3 is observed after 450 °C annealing, leading to higher thermal stability than its Sb counterpart. Sb2Te3 is a promising candidate as an n‐type contact material for TMDC‐based devices such as MoS2, MoSe2, and WS2 in future VLSI electronics and various other applications.

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Plasma screening of the fundamental absorption edge in crystals of Bi2Te3-Sb2Te3 solid solutions with more than 80 mol % Sb2Te3

Cited by 7 publications

References 5 publications

Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Sb₂Te₃ Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications

Sb₂Te₃/MoS₂ Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

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Plasma screening of the fundamental absorption edge in crystals of Bi2Te3-Sb2Te3 solid solutions with more than 80 mol % Sb2Te3

Cited by 7 publications

References 5 publications

Solvothermally Synthesized Sb2Te3 Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Solvothermally Synthesized Sb2Te3 Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Sb2Te3 Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications

Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

Contact Info

Product

Resources

About

Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Solvothermally Synthesized Sb₂Te₃ Platelets Show Unexpected Optical Contrasts in Mid-Infrared Near-Field Scanning Microscopy

Sb₂Te₃ Growth Study Reveals That Formation of Nanoscale Charge Carrier Domains Is an Intrinsic Feature Relevant for Electronic Applications

Sb₂Te₃/MoS₂ Van der Waals Junctions with High Thermal Stability and Low Contact Resistance