Plasma-sprayed semiconductor electrodes:  photoelectrochemical characterization and ammonia photoproduction by substoichiometric tungsten oxides

Ladouceur, Michel; Dodelet, J. P.; Tourillon, G.; Parent, L.; Dallaire, S.

doi:10.1021/j100374a041

Cited by 12 publications

(3 citation statements)

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“…400 C and thus, monoclinic phase was observed in our sample that was calcined up to 550 C. 28 The monoclinic WO 3 is known to show the highest photocatalytic effect than other crystal phases. 29,30 In case of bare BiVO 4 , the main peaks at 18.5 and 29.4 represent scheelite-monoclinic structure (JCPDS 14-0688). The tetragonalzirconia phase of BiVO 4 is transformed to monoclinic at 400-500 C. 31 Thus, the calcination at 550 C in this work formed the monoclinic phase of BiVO 4 .…”

Section: Physicochemical Propertiesmentioning

confidence: 99%

Heterojunction BiVO4/WO3 electrodes for enhanced photoactivity of water oxidation

Hong

Lee

Jang

et al. 2011

Energy Environ. Sci.

1,116

667

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Heterojunction electrodes were fabricated by layer-by-layer deposition of WO 3 and BiVO 4 on a conducting glass, and investigated for photoelectrochemical water oxidation under simulated solar light. The electrode with the optimal composition of four layers of WO 3 covered by a single layer of BiVO 4 showed enhanced photoactivity by 74% relative to bare WO 3 and 730% relative to bare BiVO 4 .According to the flat band potential and optical band gap measurements, both semiconductors can absorb visible light and have band edge positions that allow the transfer of photoelectrons from BiVO 4 to WO 3 . The electrochemical impedance spectroscopy revealed poor charge transfer characteristics of BiVO 4 , which accounts for the low photoactivity of bare BiVO 4 . The measurements of the incident photon-to-current conversion efficiency spectra showed that the heterojunction electrode utilized effectively light up to 540 nm covering absorption by both WO 3 and BiVO 4 layers. Thus, in heterojunction electrodes, the photogenerated electrons in BiVO 4 are transferred to WO 3 layers with good charge transport characteristics and contribute to the high photoactivity. They combine merits of the two semiconductors, i.e. excellent charge transport characteristics of WO 3 and good light absorption capability of BiVO 4 for enhanced photoactivity.

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Section: Physicochemical Propertiesmentioning

confidence: 99%

Heterojunction BiVO4/WO3 electrodes for enhanced photoactivity of water oxidation

Hong

Lee

Jang

et al. 2011

Energy Environ. Sci.

1,116

667

View full text Add to dashboard Cite

show abstract

“…4 Tungsten oxide (WO 3 ) is an indirect band gap semiconductor with interesting photoconductive behavior used in electrochromic and sensor devices. [5][6][7][8] It has demonstrated promise as a low-cost material for solar energy applications, but it is limited by its relatively high electrical resistivity. Improvements have been observed with nanoparticulate tungsten oxide, which has been prepared by both physical and chemical methods.…”

Section: Introductionmentioning

confidence: 99%

Controlled Electrodeposition of Nanoparticulate Tungsten Oxide

et al. 2002

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Nanoparticulate tungsten oxide films were synthesized by pulsed electrodeposition. Particle sizes between 45 and ∼330 nm were achieved by varying pulse duration from 5 to 500 ms. Shorter pulses increased the rate of new particle nucleation above the rate of existing particle growth, allowing for the observed variations in size. Cathodic deposition voltage (−1 ∼ −3 V) had little effect on particle size. Compared to films prepared by continuous electrodeposition, nanoparticulate tungsten oxide films showed a higher photoactivity and greater current density for the hydrogen intercalation reaction. Functional improvements are explained by the smaller particle size and larger surface area of nanocrystalline tungsten oxide.

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“…Tungsten trioxide (WO 3 ) is an n-type of semiconductor that attracts great attention in a variety of important applications including the photoelectrochemical production of hydrogen [1], gas sensing [2], electrochromic materials [3], large area display and catalytic materials [4,5]. Several different techniques have been applied to fabricate WO 3 films including vapor deposition, sol-gel with molecular templates [6,7], and electrodeposition [8][9][10].…”

Section: Introductionmentioning

confidence: 99%