2015
DOI: 10.1115/1.4031105
|View full text |Cite
|
Sign up to set email alerts
|

Plasma-Texturing Processes and a-Si:H Surface Passivation on c-Si Wafers for Photovoltaic Applications

Abstract: International audienc

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(1 citation statement)
references
References 18 publications
0
1
0
Order By: Relevance
“…Roughness structure preparation refers to constructing specific micro-scale structures, such as micro-dimples or micro-grooves, on the material’s surface, which serve as a surface modification to improve the surface properties of the material [8,9,10]. At present, there are several methods to construct micro-scale structures on the surface of Al alloys, which can be generally divided into mechanical machining, energy beam etching, and coating techniques [11,12,13,14]. In recent years, as a promising method to controllably prepare roughness structures, laser treatment has shown numerous advantages, such as high efficiency, environmental friendliness, low-cost, convenience, and facile operation [15,16,17,18].…”
Section: Introductionmentioning
confidence: 99%
“…Roughness structure preparation refers to constructing specific micro-scale structures, such as micro-dimples or micro-grooves, on the material’s surface, which serve as a surface modification to improve the surface properties of the material [8,9,10]. At present, there are several methods to construct micro-scale structures on the surface of Al alloys, which can be generally divided into mechanical machining, energy beam etching, and coating techniques [11,12,13,14]. In recent years, as a promising method to controllably prepare roughness structures, laser treatment has shown numerous advantages, such as high efficiency, environmental friendliness, low-cost, convenience, and facile operation [15,16,17,18].…”
Section: Introductionmentioning
confidence: 99%