Plasmon coupling in topological insulator multilayers

Near-field radiative heat transfer between topological insulators via surface plasmon polaritons

“…The value of Fermi energy of Bi 2 Se 3 can be modulated by the doping carrier concentration, which can be controlled either chemically or electrically by introducing anion during fabrication. Among them, the relationship between Fermi energy and electron doping can be expressed as ( Wang et al., 2020 ). In addition, from a practical viewpoint, since the dynamic modulation of thermal radiation always is a challenging and considerable topic in thermal engineering, it is indispensable to consider the active modulation of the Fermi energy on the NFRHT.…”

“…Due to the electronic properties of Bi and Se atoms, monolayer Bi 2 Se 3 shows different carrier density and mobility from graphene and ITO, resulting in different conductivity. The conductivity of Bi 2 Se 3 can be written as ( Wang et al., 2020 ): where τ is the relaxation time, E f is the Fermi energy of Bi 2 Se 3 , depending on the carrier concentration, the Fermi energy of Bi 2 Se 3 could be close to 0 eV, and the minimum value we consider in this paper is 0.05 eV. The sheet of Bi 2 Se 3 can grow on a (Bi 0.5 In 0.5 ) 2 Se 3 buffer layer on c -plane sapphire.…”

Topological Materials for Functional Optoelectronic Devices

“…[151,153] THz plasmons, Fano resonances, and spectral tunability have also been evidenced in other types of metasurfaces, for instance in ring-structured nanolayered Bi 2 Se 3 metasurfaces as reported by Autore et al, [154] or in slitstructured nanolayered Bi 2 Se 3 metasurfaces as reported by In et al [155] Furthermore, Wang et al showed that a broader spectral tunability can be achieved upon designing the metasurfaces from a multilayer stack with tailored sequence and layer thicknesses instead of a single nanolayer. [120] This enables harnessing the coupling between different chalcogenide layers to achieve multiple resonances. The tuning of the THz Fano and plasmon resonance spectral features has also been reported by varying the chalcogenide composition.…”

“…Floating zone method Bi 1.5 Sb 0.5 Te 3 −x Se x [152] Crystal Evaporation PtTe 2 [164] Crystal Evaporation PtTe 2 [165] Crystal Chemical vapor transport TaAs, NbAs [170] Thin film Exfoliation Bi 2 Te 3 [29] Thin film Exfoliation Bi 2 Se 3 [33] Thin film <100 nm Exfoliation Bi 2 Se 3 [38] Thin film 15-50 nm Exfoliation Bi 2 Te 2 Se [118] Thin film Exfoliation Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 [119] Thin film Exfoliation WTe 2 [169] Thin film 50 nm MBE Bi 2 Se 3 [114] Thin film MBE Bi 2 Se 3 [158] Thin film MBE (Bi 1 −x Sb x ) 2 Se 3 [36] Thin film 20 nmm MBE (Bi 1 −x Sb x ) 2 Te 3 [108] Thin film 8 nm (coated) MBE (Bi 1 −x Sb x ) 2 Te 3 [117] Thin film 10-20 QL MBE (Bi 1 −x Sb x ) 2 Te 3 [123] Thin film 100 nm MBE (Bi 0.75 In 0.25 ) 2 Te 3 [115] Thin film MBE (Bi 1 −x In x ) 2 Te 3 [113] Thin film 50 nm MBE (Bi 0.5 In 0.5 ) 2 Se 3 [120] Thin film few-QL MBE Na 3 Bi [41] Thin film MBE Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 [40] Thin film MBE Cd 3 As 2 [27] Thin film 500 nm MBE Cd 3 As 2 [52] Thin film MBE Cd 3 As 2 [37] Thin film 2-8 QL Evaporation (sequential) Bi 2 Se 3 [32] Thin film 10 nm Evaporation Bi 2 Se 3 [104] Thin film 70 nm Evaporation (sequential) Sb 2 Te 3 [109] Thin film 50-80 nm Magnetron sputtering Sb 2 Te 3 (C-doped) [121] Thin film 50 ALD Sb 2 Te 3 [146] Thin film (amorphous) PLD Bi 2 Te 3 [160] Thin film 17-260 nm PVD Bi x Sb xy Te z [138] Nanoplates 8-22 nm Solvothermal Bi 2 Se 3 [106] Nanoplates Solvothermal Bi 2 Te 3 [39] Nanoplates Solvothermal Bi 2 Te 3 [126] Nanoplates 10-20 nm Solvothermal Bi 2 Te 3…”

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

“…61,62 MBE-grown heterostructures have also been used to explore the interaction of magnetic materials with TIs 63 or to create designer TI behavior through ultrashort period lattices, 64 or explore the interactions of the surface states. 65 The properties of MBE-grown TI films can be customized through both alloying and doping. Alloying Bi 2 Te 3 and Sb 2 Te 3 has been explored to create bulk insulating TI films and to pull the Dirac point of Bi 2 Te 3 into the bandgap.…”