Plasmon‐Enhanced Silicon Nanowire Array‐Based Hybrid Heterojunction Solar Cells

Abstract

In the last decade, freestanding, single crystal silicon nanowires (SiNWs) have attracted significant attention as a potential material for low‐cost optoelectronic devices. In this paper, we demonstrate how strong localized surface plasmon modes, induced using silver nanoparticles, can be used to achieve significant improvement in a simple hybrid organic–inorganic photovoltaic device between n‐type silicon nanowires and poly(3,4‐ethylenedioxythiophene):poly‐(styrenesulfonate) (PEDOT:PSS). At photon energies above plasmon resonance, metallic nanoparticle‐induced absorption leads to a dramatic reduction of the reflectivity and we report a significant improvement in both the short circuit current density (Jsc) and the open circuit voltage (Voc). This leads to an overall 52% increase in the power conversion efficiencies (PCEs) of the photovoltaic devices when decorating the SiNWs with silver nanoparticles prior to PEDOT:PSS deposition.

Low-cost photodetector architectures fabricated at room-temperature using nano-engineered silicon wafer and sol-gel TiO2 – based heterostructures

“…The immersion lasts 40 minutes at room temperature. After etching, the resulting vertically-aligned nanowire arrays are covered by silver dendrite layer 16 . This residual silver is entirely removed using 70% nitric acid (HNO 3 ) for 1 hour at room temperature 16 .…”

“…After etching, the resulting vertically-aligned nanowire arrays are covered by silver dendrite layer 16 . This residual silver is entirely removed using 70% nitric acid (HNO 3 ) for 1 hour at room temperature 16 . Figure 1(a,b) show the top-view and 45° tilted-view SEM micrographs of the final silicon nanowire arrays.…”

Tailored Interfaces of the Bulk Silicon Nanowire/TiO2 Heterojunction Promoting Enhanced Photovoltaic Performances

“…Metal-assisted wet-chemical etching (MAWCE) of bulk silicon wafers can allow useful all-solution-based mass production of ordered vertically aligned NW arrays over large areas because it permits control over the geometry of their diameter, length, and spacing, while avoiding high-cost and low-output usual lithographic processes. 11−13 MAWCE is based on the principles of the galvanic displacement reaction, details of which have been previously discussed. 14−16…”

Perovskite/Silicon‐Nanowire‐Based Hybrid Heterojunctions for Fast and Broadband Photodetectors

“…To date, SiNWs heterojunction devices, such as solar cells and photodetectors, have emerged and be favored over the traditional device architectures due to the low‐cost fabrication method and very low reflectance. [ 5,6,21–23 ] Due to their high surface‐to‐volume ratio and 1D structure, these SiNW‐array‐based devices can offer unique properties compared to their bulk (3D) and thin film (2D) counterparts. For instance, they can offer the following: 1) much larger surface‐to‐volume ratios, thus prolonging the carrier lifetime; [ 24 ] 2) shorter carrier pathways; [ 25 ] and 3) a very effective antireflection behavior.…”